A Brief Review of Plasma Enhanced Atomic Layer Deposition of Si3N4

Introduction to (plasma-enhanced) atomic layer deposition

Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...

Review of plasma-enhanced atomic layer deposition: Technical enabler of nanoscale device fabrication

Comparison of ammonia plasma and AlN passivation by plasma-enhanced atomic layer deposition

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Characterization of atomic layer deposition HfO2, Al2O3, and plasma- enhanced chemical vapor deposition Si3N4 as metal–insulator–metal capacitor dielectric for GaAs HBT technology

Characterization was performed on the application of atomic layer deposition (ALD) of hafnium dioxide (HfO2) and aluminum oxide (Al2O3), and plasma-enhanced chemical vapor deposition (PECVD) of silicon nitride (Si3N4) as metal–insulator–metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The results show that the MIM capacitor with 62 nm of ALD HfO2 res...

Plasma-Enhanced Atomic Layer Deposition of Palladium on a Polymer Substrate

In this paper, a method for the plasma-enhanced (PE) atomic layer deposition (ALD) of palladium on air-exposed, annealed poly(p-xylylene) (Parylene-N, or PPX) is presented. Palladium is successfully deposited on PPX at 80 °C using a remote, inductively coupled, hydrogen/nitrogen plasma with palladium (II) hexafluoroacetylacetonate (Pd(hfac)2) as the precursor. By optimizing the mixture of hydro...