A BN‐Doped U‐Shaped Heteroacene as a Molecular Floating Gate for Ambipolar Charge Trapping Memory

نویسندگان

چکیده

Two wide-bandgap U-shaped polycyclic aromatic hydrocarbons with/without boron and nitrogen (BN-) doping (BN-1 C-1) were synthesized to tune the electronic features suit performance requirements in organic field-effect transistor memory (OFET-NVM). The chemical structures characterized by scanning tunneling microscopy single crystal diffraction. Owing electron donor effect of N high affinity B, BN-1-based OFET-NVM displays large ambipolar windows an enhanced charge storage density compared C-1 most reported small molecules. A novel supramolecular system formed via BN-1 PMMA contributes fabricating uniform films with homogeneous microstructures, which serve as a two-in-one tunnelling dielectric trapping layer realize long-term retention reliable endurance. Our results demonstrate that both BN engineering are crucial for

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ژورنال

عنوان ژورنال: Angewandte Chemie

سال: 2023

ISSN: ['1521-3773', '1433-7851', '0570-0833']

DOI: https://doi.org/10.1002/ange.202303335