A BJT-Based Temperature-to-Digital Converter With ±60 mK ( $3~\sigma$ ) Inaccuracy From −55 °C to +125 °C in 0.16-μm CMOS
نویسندگان
چکیده
منابع مشابه
A 1.2V 10µW NPN-based temperature sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from -70°C to 125°C
An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 C (3σ) and a trimmed inaccuracy of ±0.2 C (3σ) over the temperature range from −70 C to 125 C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling an...
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ژورنال
عنوان ژورنال: IEEE Journal of Solid-State Circuits
سال: 2017
ISSN: 0018-9200,1558-173X
DOI: 10.1109/jssc.2016.2638464