A 50-nm Gate-Length Metamorphic HEMT Technology Optimized for Cryogenic Ultra-Low-Noise Operation

This article reports on the investigation and optimization of cryogenic noise mechanisms in InGaAs metamorphic high-electron-mobility transistors (mHEMTs). HEMT technologies with a gate length 100, 50, 35 nm are characterized both under room temperature conditions. Furthermore, two additional technology variations 50-nm investigated to decompose different HEMTs. Therefore, extended Ku-band low-noise amplifiers presented benchmark their performance. Technology C exhibits an average effective 4.2 K between 8 18 GHz minimum 3.3 when amplifier is cooled 10 K. The provides gain 39.4 dB at optimal bias. improved performance has been achieved by epitaxial structure technology, which leads low leakage currents high drain current To best authors' knowledge, this first time that demonstrated Ku-band.