A 24 ?GHz PLL with low phase noise for 60 ?GHz Sliding-IF transceiver in a 65-nm CMOS

نویسندگان

چکیده

This work presents a 24 ?GHz integrated Phase-Locked Loop in 60 sliding-IF transceiver for IEEE 802.15.3c standard with low phase noise. For noise, varactor and MOM cap combination method is applied this PLL. The capacitor bank optimized to decrease the noise folding from circuit within method. analog PLL fabricated 65 ?nm CMOS technology of ?98.8 dBc/[email protected] ?MHz, reference spur ?62.4 dBc. power consumption 45.6 ?mW, including output buffer.

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

A 60-GHz Low Noise Amplifier in 0.13-μm CMOS

The low noise amplifier (LNA) serves as the first component of the radio frequency receiver system. The performance of LNA determines the sensitivity and selectivity of the receiver. In order to maximize performance the gain, noise figure and input matching of LNA needs to be optmized. This paper presents a 60GHz low noise amplifier on 0.13-μm standard CMOS technology designed using classical n...

متن کامل

Compact low-power 7-bit 2.6 GS/s 65 nm CMOS ADC for 60 GHz applications

A 7-bit, 2.6 GS/s time-interleaved analogue-to-digital converter (ADC) for 60 GHz applications is designed and fabricated in 65 nm CMOS. The proposed subranging ADC architecture with time-shifting track-and-hold and two-phase amplification and encoding significantly enhances the speed of individual ADCs and reduces the number of interleaved channels to only four. At 2.6 GS/s sampling rate with ...

متن کامل

Design of a Very Low-power, Low-cost 60 GHz Receiver Front-End Implemented in 65 nm CMOS Technology

The research on the design of receiver front-ends for very high data-rate communication in the 60 GHz band in nanoscale CMOS technologies is going on for some time now. While a multitude of 60 GHz front-ends have been published in recent years, they are not consequently optimized for low power consumption. Thus, these front-ends dissipate too much power for battery-powered applications like han...

متن کامل

A 1.8 GHz CMOS Low-Noise Amplifier

A 1.8 GHz low-noise amplifier has been designed and fabricated in a standard 0.35 pm CMOS process. Measurement results indicate that the amplifier has a forward gain (S21) of 10.5 dB and a noise figure of 3.94 dB, while consuming 40 mW from a 2.5 V supply.

متن کامل

An 11 GS/s 1.1 GHz Bandwidth Interleaved ΔΣ DAC for 60 GHz Radio in 65 nm CMOS

This work presents an 11 GS/s 1.1 GHz bandwidth interleaved ∆Σ DAC in 65 nm CMOS for the 60-GHz radio baseband. The high sample rate is achieved by using a two-channel interleaved MASH 1-1 architecture with a 4-bit output resulting in a predominantly digital DAC with only fifteen analog current cells. Two-channel interleaving allows the use of a single clock for the logic and the multiplexing w...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Microelectronics Journal

سال: 2021

ISSN: ['1879-2391', '0026-2692']

DOI: https://doi.org/10.1016/j.mejo.2021.105106