A 2 Gb/s optical receiver with monolithically integrated MSM photodetector in standard CMOS process
نویسندگان
چکیده
منابع مشابه
[A1-1] 12.5-Gb/s Monolithically Integrated Optical Receiver With CMOS Avalanche Photodetector
We present a 12.5-Gb/s monolithically integrated optical receiver with CMOS avalanche photodetector (CMOS-APD) realized in 65-nm CMOS technology. The optical detection bandwidth limitation of CMOS-APD due to the carrier transit time is compensated by underdamped TIA. With this optical receiver, 12.5-Gb/s 850-nm optical data are successfully detected with bit-error rate less than 10 at the incid...
متن کاملA fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector.
We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compati...
متن کاملPlasmonic Sensor Monolithically Integrated with a CMOS Photodiode
Complementary metal oxide semiconductor (CMOS) technology has made personal mobile computing and communications an everyday part of life. In this paper we present a nanophotonic integrated CMOS-based biosensor that will pave the way for future personalized medical diagnostics. To achieve our aim, we have monolithically integrated plasmonic nanostructures with a CMOS photodiode. Following this a...
متن کاملA bandwidth adjustable integrated optical receiver with an on-chip silicon avalanche photodetector
A bandwidth adjustable integrated optical receiver having an on-chip silicon avalanche photodetector is realized with standard 0.25-μm silicon-germanium bipolar complementary metal-oxidesemiconductor technology for optical interconnect applications. With the controllable capacitive degeneration technique, the optical receiver bandwidth can be adjusted for the best bit error rate performance.
متن کامل6.25-Gb/s Optical Receiver Using A CMOS-Compatible Si Avalanche Photodetector
An optical receiver using a CMOS-compatible avalanche photodetector (CMOS-APD) is demonstrated. The CMOS-APD is fabricated with 0.18 μm standard CMOS technology and the optical receiver is implemented by using the CMOS-APD and a transimpedance amplifier on a board. The optical receiver can detect 6.25-Gb/s data with the help of the series inductive peaking effect.
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Chinese Science Bulletin
سال: 2011
ISSN: 1001-6538,1861-9541
DOI: 10.1007/s11434-011-4482-3