A 112 Gb/s Radiation-Hardened Mid-Board Optical Transceiver in 130-nm SiGe BiCMOS for Intra-Satellite Links

We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite interconnects. The chipset comprises vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier (TIA) integrated circuits (ICs) with four channels per die, which are adapted for flip-chip assembly into mid-board optics (MBO) module. ICs designed in IHP 130 nm SiGe BiCMOS process (SG13RH) leveraging proven robustness radiation environments high-speed performance featuring bipolar transistors (HBTs) f T /f MAX values up 250/340 GHz. Besides hardening by technology, radiation-hardened-by-design (RHBD) components used, including enclosed layout (ELTs) digital logic cells. features module, provide data from post-layout simulations. present evaluation on analog devices cells, indicate that will reliably operate at typical total ionizing dose (TID) levels single event latch-up thresholds found geostationary satellites.