A 10 nm Short Channel MoS <sub>2</sub> Transistor without the Resolution Requirement of Photolithography (Adv. Electron. Mater. 12/2021)
نویسندگان
چکیده
Short-Cannel MoS2 Transistors Yi Yang, He Tian, Xing Wu, Tian-Ling Ren, and colleagues demonstrate a photolithography resolution-independent method to realize 10 nm short-channel transistors in article 2100543. By depositing the noble electrode partially on self-oxidized aluminum electrode, channel length is directly defined by ≈10 thickness of oxidization layer, which can provide new opportunities for scaling down 2D materials-based transistors.
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ژورنال
عنوان ژورنال: Advanced electronic materials
سال: 2021
ISSN: ['2199-160X']
DOI: https://doi.org/10.1002/aelm.202170057