631% room temperature tunnel magnetoresistance with large oscillation effect in CoFe/MgO/CoFe(001) junctions
نویسندگان
چکیده
We demonstrate tunnel magnetoresistance (TMR) ratios of up to 631% at room temperature (RT) using CoFe/MgO/CoFe(001) epitaxial magnetic junctions (MTJs). The TMR ratio increased 1143% 10 K. large resulted from fine-tuning atomic-scale structures the MTJs, such as crystallographic orientations and MgO interface oxidation by insertion ultrathin CoFe Mg layers, which are expected enhance well-known Δ 1 coherent tunneling transport. Interestingly, oscillation effect, is not covered standard theory, also became significant. A 0.32-nm period with increasing thickness dominates transport in a wide range thicknesses; peak-to-valley difference exceeds 140% RT, attributed appearance oscillatory components resistance area product.
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Dr. P. Li, Dr. A. Chen, Prof. Y. Zhao, Dr. S. Zhang, Dr. L. Yang, Dr. Y. Liu, Prof. M. Zhu, Prof. H. Zhang Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics Tsinghua University Beijing 100084 , China E-mail: [email protected] Dr. P. Li, Dr. A. Chen, Prof. Y. Zhao, Dr. S. Zhang, Dr. L. Yang, Dr. Y. Liu, Prof. M. Zhu, Prof. H. Zhang Collaborative Innovation Ce...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2023
ISSN: ['1520-8842', '0003-6951', '1077-3118']
DOI: https://doi.org/10.1063/5.0145873