5,291‐ppi OLED display enabled by monolithic integration of <i>C</i> ‐axis‐aligned crystalline IGZO FET and Si CMOS

Abstract For the first time in world, we have fabricated an organic light‐emitting diode (OLED) display that monolithically integrates Si CMOS and oxide semiconductor FETs (OSFETs). OSFETs can be stacked on CMOS. With this OS/Si monolithic stack technology, driver circuits with pixel OSFETs. This enables displays to thin bezels. In addition, fabricating OSFETs, which higher breakdown voltage than CMOS, allows use of tandem OLED devices require high driving voltage. a density over 5,000 ppi.