4H‐SiC photoconductive semiconductor based ultra‐wideband microwave generation with MHz tunable repetition rate

Use of the vanadium-compensated semi-insulating (VCSI) 4H-SiC photoconductive semiconductor switch (PCSS) for generation an ultra-wideband (UWB) microwave with MHz tunable re-frequency is demonstrated. To evaluate impact device architectures on performance, a 4H-SiC-based was manufactured and evaluated using laser cluster driver configurable optical pulse re-frequency. The 1.5 mm-thick PCSS found to operate electric field up 20 kV photocurrent 20.7 A. fabricated system could generate ultrahigh repetition frequency pulses from 0.5 2.0 MHz. Simulation UWB antenna carried out examine radiation field. peak electric-field factor (rE) single-unit can reach 17 kV.