4H-SiC PiN Diode Protected by Narrow Field Rings Investigated by the Micro-OBIC Method
نویسندگان
چکیده
This paper presents micro-OBIC measurements performed at different voltages on two devices protected by narrow field rings. At the surface of device #1, a polyimide layer was deposited during fabrication process. On contrary, passivation removed #2. Thanks to micrometer spatial resolution and spot size carefully focused, small gaps in range 1 μm can be visible OBIC profiles. Thus, variation μ-obic accurately reflects topology each ring.
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ژورنال
عنوان ژورنال: Materials Science Forum
سال: 2022
ISSN: ['1422-6375', '0250-9776', '0255-5476', '1662-9752', '1662-9760']
DOI: https://doi.org/10.4028/p-2ch22f