2.7-kV AlGaN/GaN Schottky barrier diode on silicon substrate with recessed-anode structure

In this paper, we demonstrate high-performance lateral AlGaN/GaN Schottky barrier diodes (SBD) on Si substrate with a recessed-anode structure. The optimized rapid etch process provides results in improving etching quality 0.26-nm roughness of the anode recessed surface. By using high work function metal Pt as electrode, low turn-on voltage 0.71 V is obtained uniformity ±0.023 for 40 devices. Supported by flat recess surface and related field plate design, SBD device anode–cathode spacing 15 μm show specific on-resistance (Ron,sp) 1.53 mΩ·cm2 only, physical breakdown can reach 1678 power figure-of-merit (P-FOM) 1840 MW/cm2. For 30 μm, be 2705 FOM 2217