25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode

25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode.

We demonstrate a hybrid silicon modulator and switch operating up to 25 Gb/s with over 10 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm while the switch has switch time less than 35 ps and crosstalk smaller than -12 dB.

High Performance Hybrid Silicon Evanescent Traveling Wave Electroabsorption Modulators

In this paper, for the rst time, a high performance hybrid silicon evanescent traveling wave electroabsorption modulator based on asymmetric intra-step-barrier coupled double strained quantum wells active layer is introduced which has double steps at III/V mesa structure. Through this active layer, hybrid silicon evanescent traveling wave electroabsorption modulator will be advantages such as v...

channeling at microwave frequencies using a capacitively loaded

Ultralow drive voltage silicon traveling-wave modulator.

There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demo...

Beam Dynamics in a Hybrid Standing Wave- Traveling Wave Photoinjector

We discuss the dynamics of of a photoinjector beam in a hybrid traveling wavestanding wave photoinjector. With the field profile deduced from electromagnetic simulations, it is seen that the acceleration program induces strong velocity bunching. The beam dynamics in this scenario are explored using UCLA PARMELA. With a solenoid field overlaid on the TW section one may control emittance oscillat...