234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer

Far-ultraviolet-C (far-UVC) light-emitting diodes (LEDs) with an emission wavelength of 234 nm different polarization-doped AlGaN hole injection layers (HILs) are compared regarding their power, voltage, and leakage current. The influence the thickness layer (PDL), additional Mg doping PDL, as well a combination PDL conventionally Mg-doped HIL will be discussed. thicknesses show nearly no on power or voltage. However, current LEDs below turn-on voltage decreases increasing PDL. In contrast, ([Mg] ∼ 1.5 × 1019 cm−3) results in fivefold decrease at unchanged Finally, shows also similar to single but increases. Based these optimizations, were realized maximum external quantum efficiency 1% 20 mA, 4.7 mW, 9.0 V 100 mA. This that polarization concept is suited realize far-UVC improved performance p-side.