150 mm SiC Engineered Substrates for High-Voltage Power Devices

Promise and Challenges of High-Voltage SiC Bipolar Power Devices

Although various silicon carbide (SiC) power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major lim...

Material science and device physics in SiC technology for high-voltage power devices

Epitaxial Growth and Characterization of SiC for High Power Devices

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Layer Transfer from Chemically Etched 150 mm Porous Si Substrates

We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface conditioning for all Si layer transfer processes based on porous Si has been, up to now without exception, carried out by electrochemical etching. In contrast, our chemical stain etc...

SiC Power Devices and Modules