10-GHz Fully Differential Sallen–Key Lowpass Biquad Filters in 55nm SiGe BiCMOS Technology
نویسندگان
چکیده
منابع مشابه
Design of a 4.4 to 5 GHz LNA in 0.25µm SiGe BiCMOS technology
This paper describes a Low-Noise Amplifier (LNA), designed using a 0.25-μm SiGe process, operating in the 4.4– 5 GHz band. A power gain of 12.8 dB at 5 GHz has been achieved with a power consumption of 23.77 mW using a 2 V power supply. The noise figure is 2.2 dB while the input referred 1dB compression point is −6.2 dBm.
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ژورنال
عنوان ژورنال: Electronics
سال: 2020
ISSN: 2079-9292
DOI: 10.3390/electronics9040563