نتایج جستجو برای: time resolved pl (trpl)

تعداد نتایج: 1950369  

Journal: :iranian journal of science and technology (sciences) 2008
m. esmaeili

due to many important applications, the group iii-nitride semiconductors have recently attractedremarkable attention among semiconductor researchers and engineers. in this paper, we report on the impact of extrinsic and temporal carriers on the screening of polarization internal fields. the optical efficiency of gan/algan multiple quantum well (mqw) nanostructures were studied by means of photo...

2015
Hyun Jeong Hyeon Jun Jeong Hye Min Oh Chang-Hee Hong Eun-Kyung Suh Gilles Lerondel Mun Seok Jeong

Carrier localization phenomena in indium-rich InGaN/GaN multiple quantum wells (MQWs) grown on sapphire and GaN substrates were investigated. Temperature-dependent photoluminescence (PL) spectroscopy, ultraviolet near-field scanning optical microscopy (NSOM), and confocal time-resolved PL (TRPL) spectroscopy were employed to verify the correlation between carrier localization and crystal qualit...

Journal: :Physical chemistry chemical physics : PCCP 2015
Glenda B De los Reyes Mita Dasog MengXing Na Lyubov V Titova Jonathan G C Veinot Frank A Hegmann

We explore the dynamics of blue emission from dodecylamine and ammonia functionalized silicon nanocrystals (Si NCs) with average diameters of ∼3 and ∼6 nm using time-resolved photoluminescence (TRPL) spectroscopy. The Si NCs exhibit nanosecond PL decay dynamics that is independent of NC size and uniform across the emission spectrum. The TRPL measurements reveal complete quenching of core state ...

حمید هراتی‌زاده, , مرتضی اسمعیلی, , پر اولاف هولتز, ,

Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...

Journal: :Physical review. B, Condensed matter 1996
Yuan Xu Zheng Li Ge Wang Chang Sotomayor Torres CM Ledentsov

Photoluminescence ~PL! and time-resolved photoluminescence ~TRPL! were used to study optical emissions of ultrathin InAs layers with average layer thickness ranging from 1 12 to 1 ML grown on GaAs substrates. We have found that the inhomogeneous broadening of the PL from InAs layers can be well described by the quantum-well model with InAs islands coupling to each other and being regarded as a ...

Journal: :Optics express 2012
Lee-Woon Jang Dae-Woo Jeon Trilochan Sahoo Dong-Seob Jo Jin-Woo Ju Seung-jae Lee Jong-Hyeob Baek Jin-Kyu Yang Jung-Hoon Song Alexander Y Polyakov In-Hwan Lee

Optical properties of InGaN/GaN multi-quantum-well (MQW) structures with a nanolayer of Ag/SiO2 nanoparticle (NP) on top were studied. Modeling and optical absorption (OA) measurements prove that the NPs form localized surface plasmons (LSP) structure with a broad OA band peaked near 440-460 nm and the fringe electric field extending down to about 10 nm into the GaN layer. The presence of this ...

Journal: :Nanoscale 2017
Holly F Zarick Abdelaziz Boulesbaa Alexander A Puretzky Eric M Talbert Zachary R DeBra Naiya Soetan David B Geohegan Rizia Bardhan

In this work, we examine the impact of hybrid bimetallic Au/Ag core/shell nanostructures on the carrier dynamics of methylammonium lead tribromide (MAPbBr3) mesoporous perovskite solar cells (PSCs). Plasmon-enhanced PSCs incorporated with Au/Ag nanostructures demonstrated improved light harvesting and increased power conversion efficiency by 26% relative to reference devices. Two complementary ...

2004
Madalina Furis Alexander N. Cartwright Jeonghyun Hwang William J. Schaff

We report on detailed temperature dependent, time-resolved photoluminescence (TRPL) studies of Si-doped AlGaN epilayers. In these samples, the Al concentration varies from 25% to 66%. The samples were found to exhibit metallic-like temperature-independent conductivity. The deep level "yellow" emission, whose presence would indicate the existence of a large number of defects associated with grow...

2001
Y. Kawakami

Time-resolved optical characterization is an indispensable tool to study the recombination mechanisms of excitons and/or carriers based on radiative, non-radiative, localization and many-body processes. In this paper, we review the instrumentation of various spectroscopic techniques for the assessment of InxGa1– xN-based semiconductors such as time-resolved photoluminescence (TRPL), time-resolv...

2007
Giovanni Morello Marco Anni PantaleoDavide Cozzoli Liberato Manna Roberto Cingolani Milena De Giorgi

Time Resolved Photoluminescence (TRPL) measurements on the picosecond time scale (temporal resolution of 17 ps) on colloidal CdSe and CdSe/ZnS Quantum Dots (QDs) were performed. Transient PL spectra reveal three emission peaks with different lifetimes (60 ps, 460 ps and 9–10 ns, from the bluest to the reddest peak). By considering the characteristic decay times and by comparing the energetic se...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید