modeling and simulation of communication circuits at high frequency are important challenges ahead in the design and construction of these circuits. knowing the fact that the lumped element model is not valid at high frequency, distributed analysis is presented based on active and passive transmission lines theory. in this paper, a lossy transmission line model of traveling wave switch (twsw) i...

In this study, a W-band GaN single-pole single-throw (SPST) switch was designed. To realize the pass and isolation modes of SPST switch, we proposed design technique unit branch consisting one transistor transmission. The characteristic impedance length transmission line were determined by angle at which straight connecting impedances on off states meets real axis Smith chart. Using technique, ...

This paper demonstrates the design of high-isolation millimeter-wave monolithic integrated switches using MOCVD-grown InGaAs/InP PIN diodes as switching devices. W-band single-pole single-throw switch using double shunt diode topology allowed significant improvement of isolation while keeping insertion loss low. The SPST switch used two InGaAs PIN diodes and demonstrated better than 35dB isolat...

A novel approach for the design of millimeterwave (mmWave) substrate-integrated waveguide (SIW) switches is presented. The switch based on controllable photoconductive elements (PEs), whose conductivity modulated by a light source. PE integrated top SIW metal plate and provides either short-circuit or transmission operation regime, depending actuation conditions. Due to actuation, mmWave dc con...

Modeling and simulation of communication circuits at high frequency are important challenges ahead in the design and construction of these circuits. Knowing the fact that the lumped element model is not valid at high frequency, distributed analysis is presented based on active and passive transmission lines theory. In this paper, a lossy transmission line model of traveling wave switch (TWSW) i...

In this work, carbon nanotube (CNT) based interconnections and switches will be reviewed, discussing the possibility to use nanotubes as potential building blocks for signal routing in microwave networks. In particular, theoretical design of coplanar waveguide (CPW), micro‐strip single‐pole‐single‐throw (SPST) and single‐pole‐double‐throw (SPDT) devices has bee...

This brief reports a compact DC-110GHz single-pole single-throw (SPST) switch in 22nm FDSOI CMOS technology. The adopts solely three n-MOSFETs, two of them with special device option to reduce the substrate parasitic effects, and third n-MOSFET parallel gate resistance series improve isolation. Unlike prior wideband mmwave switches, it does not make use any large passive components, such as spi...

The paper explores the modelling and simulation of a Radio Frequency Micro Electro-Mechanical Systems (RF MEMS) switch with the use of a novel seesaw design providing Double-Pole Double-Throw (DPDT) functionality. This optimises the capabilities of the seesaw design structure for use in mobile communications systems and devices. After researching other available seesaw designs, it was realised ...

This paper presents a hybrid design based, CMOS millimeter-wave (mm-wave) single-polar single-throw (SPST) switch. The circuit design starts from the analysis and optimization of a distributed structure, while implemented using coupled lump elements for performance improvement and area-efficient layout. Moreover, a specific bias scheme is used to further decrease insertion loss by more than 0.5...

This paper describes 0.18um CMOS silicon-on-insulator (SOI) technology and design techniques for SOI RF switch designs for wireless applications. The measured results of SP4T (single pole four throw) and SP8T (single pole eight throw) switch reference designs are presented. It has been demonstrated that SOI RF switch performance, in terms of power handling, linearity, insertion loss and isolati...