We have investigated atomic intermixing in InxGa1−xAs/InP quantum well (QW) structures induced by proton irradiation using photoluminescence (PL) and time-resolved photoluminescence. Photoluminescence results revealed that energy shift was systematically decreased as irradiation temperature was increased, followed by a broadening of the PL linewidth and reduction of the PL intensity. Time-resol...

due to many important applications, the group iii-nitride semiconductors have recently attractedremarkable attention among semiconductor researchers and engineers. in this paper, we report on the impact of extrinsic and temporal carriers on the screening of polarization internal fields. the optical efficiency of gan/algan multiple quantum well (mqw) nanostructures were studied by means of photo...

We discuss properties of cw and time-resolved photoluminescence (PL) as well as photoluminescence excitation (PLE) from co-doped ZnSe:Cl,N samples. These samples are characterized by the presence of the potential fluctuations due to charged donors and acceptors. We compare intensity dependent cw PL with the theory and find a good agreement. We also find that the material parameters obtained fro...

Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photol...

The effect of doping by boron on optical properties of multilayers containing Si-NCs were studied by means of photoluminescence (PL), time-resolved PL, photoluminescence excitation (PLE), transmission and reflection measurements. It was found that PL decay is strongly non-single exponential and can be described by means of Laplace transform of log-normal decay rates distribution. It was also pr...

This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-source molecular beam epitaxy (SS-MBE) and investigated via photoluminescence (PL), spectroscopic ellipsom...

Photoluminescence properties of a quantum system consisting of four different size GaAs quantum wells (Lz=15, 7, 4.5 and 3 nm) clad by 50 nm thick Al0.24Ga0.76As barriers have been investigated by steady-state and time-resolved (TR) photoluminescence (PL) experiments at 13-300 K. It is found that the low temperature PL emission energy distribution is not uniform over the four excitonic emission...

We investigated the optical properties of Ge nanocrystals surrounded by Ge3N4. The broad emission ranging from infrared to blue is due to the dependence on the crystal size and preparation methods. Here, we report high resolution Photoluminescence (PL) attributed to emission from individual Ge nanocrystals (nc-Ge) spatially resolved using micro-photoluminescence and detailed using temperature a...

We have systematically studied the optical properties of ZnxCdyMg12x2ySe alloys using photoluminescence ~PL! and photoluminescence excitation. It is shown that, at low temperatures, PL is dominated by excitons localized by potential fluctuations, which become stronger with increasing Mg concentration. Such potential fluctuations are discussed in terms of a large valence band offset in Zn~Cd!Se/...

We have investigated the photoluminescence (PL) of in individual single-walled carbon nanotubes (SWNTs) placed in field-effect transistor structures to study carrier transport in the SWNT. The relation between the recombination lifetime and carrier transit time has been evaluated from the drain-field dependence of PL intensity. Time-resolved photoluminescence of SWNTs dispersed in surfactant so...