نتایج جستجو برای: n-type semiconductor
تعداد نتایج: 2233675 فیلتر نتایج به سال:
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
This paper investigates the amount of doping concentration in silicon semiconductor using optical principle. Both donor and acceptor impurities of n type and p-type silicon semiconductor materials are computed at wavelength of 1550 nm. During the computation of donor and acceptor impurities, both reflection and absorption losses are considered. Theoretical result showed that transmitted intens...
In this study, electrochemical behaviour of passive films formed on AISI 316L stainless steel (AISI 316L) in three acidic solutions concentrations (0.3, 0.6, and 0.9M HNO3) under open circuit potential conditions were evaluated by potentiodynamic polarization, Mott–Schottky analysis and electrochemical impedance spectroscopy (EIS) techniques. The potentiodynamic polarization results showed that...
A thin-film transistor: An n-type polymer semiconductor, poly(2,3-bis(perfluorohexyl)thieno[3,4-b]pyrazine), was synthesized through a Pd-catalyzed polycondensation employing a perfluorinated multiphase solvent system. This is the first example of an n-type polymer semiconductor with exclusive solubility in fluorinated solvents. The fabrication of organic field effect transistors containing thi...
This study focuses on the semiconductor properties of passive films formed on AISI 420 stainless steel immersed in four nitric acid solutions under open circuit potential (OCP) conditions. For this purpose, the passivation parameters and semiconductor properties of passive films were derived from potentiodynamic polarization and Mott–Schottky analysis, respectively. The OCP plots showed that th...
SID Symposium Digest of Technical PapersVolume 52, Issue S1 p. 101-101 Sessions: Session 15: Oxide TFT-Defects & Stability (Active-Matrix Devices)Free to Read 15.3: Defect Engineering in n-Type Semiconductor TFTs Guoli Li, Li School Physics and Electronics, Hunan University, Changsha, ChinaSearch for more papers by this authorJiawei He, Jiawei He Technology, Wuhan Wuhan, authorHuiru Wang, Huiru...
The p-n Junction The p-n junction is a homojunction between a p-type and an n-type semiconductor. It acts as a diode, which can serve in electronics as a rectifier, logic gate, voltage regulator (Zener diode), switching or tuner (varactor diode); and in optoelectronics as a light-emitting diode (LED), laser diode, photodetector, or solar cell. In a relatively simplified view of semiconductor ma...
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