Many efforts have been made to model adsorption and diffusion processes in metalorganic frameworks (MOFs) in the past several years. In most of these studies, the framework has been kept rigid. In this study, we examine the effect of using a flexible framework model on the self-diffusion coefficients and activation energies calculated for several short n-alkanes and benzene in IRMOF-1 from mole...

A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while deliverin...

A hybrid approach of colloidal lithography and metalorganic chemical vapour deposition (MOCVD) has been used to fabricate ZnO nanowire bundles and nanoholes by using a silver metalorganic precursor as the growth catalyst.

Articles you may be interested in High-quality 1.3 m-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates Appl. Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation High-detectivity InAs quantum-dot infrared photodetectors grown on InP by metal–organic chemical–vapor deposition Appl. High detectivit...

Photoluminescence Study of Gallium Arsenide, Aluminum Gallium Arsenide, and Gallium Antimonide Thin Films Grown by Metalorganic Chemical Vapor Deposition

GROWTH AND CHARACTERIZATION OF FERROMAGNETIC SEMICONDUKTOR GaN:Mn THIN FILMS USING PLASMA ASSISTED METALORGANIC CHEMICAL VAPOR DEPOSITION(PA-MOCVD)

Research projects of the Department of Chemistry, University of Basel are reviewed ranging from the synthesis of complex natural products to the development of metalorganic catalysts and organocatalysts.

Thermodynamic analysis of III-V semiconductor alloys grown by metalorganic vapor phase epitaxy Toshihiro Asai and David S. Dandy Dept. of Chemical Engineering, Colorado State University, Fort Collins, Colorado 80523-1370 A thermodynamic analysis has been applied to systematically study III-V semiconductor alloy deposition, including nitrides grown by metalorganic vapor phase epitaxy. The predic...