in this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (ldds-cntfet) with a negative differential resistance (ndr) characteristic, called negative differential resistance ldds-cntfet (ndr-ldds-cntfet). the device was simulated by using a non equilibrium green’s function method. to achieve this phenomenon, we have created...

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...

In this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (LDDS-CNTFET) with a negative differential resistance (NDR) characteristic, called negative differential resistance LDDS-CNTFET (NDR-LDDS-CNTFET). The device was simulated by using a non equilibrium Green’s function method. To achieve this phenomenon, we have created...

We propose a new Metal-oxide-semiconductor carbon-nanotube transistor (MOSCNT) in which source (S) and drain (D) regions are formed by band engineered multi-wall carbon nanotubes (BE-MWCNTs). The gradual potential profiles of these band-engineered S/D regions weakening the longitudinal confinements in the channel reduce the band-to-band tunneling significantly and hence eliminating the ambipola...

A new resistance model for lightly doped source/drain regions featuring a nonlinear gate voltage dependence has been implemented in the Bsim3v3 model. This is achieved by separating the LDS(D) resistance into a voltage dependent accumulation and a spreading part.

Abstract We report detailed fabrication and characterization of poly-Si thin-film transistors (TFTs) with T-shaped gate (T-gate) lightly-doped drain (LDD) structures. The formation the LDD underneath wings a T-gate primarily relies on shadowing implanted dopants during implantation source drain. Therefore, structures in our proposed TFTs can save number process steps as compared to conventional...

The performance and reliability of NMOSFET asymmetric lightly doped drain (LDD) devices (with no LDD on the source side) are compared with those of conventional LDD devices. At a fixed Vdd; asymmetric LDD devices exhibit higher Idsat and shorter hot-carrier lifetime. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd while higher Idsat is retained. For t...