Ring ultramicroelectrodes, which are of particular interest as probes for scanning electrochemical microscopy (SECM), combined with near-field scanning optical microscopy, were investigated. Theoretical SECM tip current-distance (approach) curves for a ring electrode were calculated by numerical (finite element) analysis. The SECM curves obtained were a function of the geometry of the tips incl...

energy conservation in buildings plays a vital role for sustainable development of societies and nations. although, newer buildings in developing nations are being constructed using energy conservation approach, existing buildings have higher energy demand to meet the desired comfort. excessive energy demand for cooling the built environment is a major problem over most of the arid climatic zon...

Preliminary spectroscopy measurements of Al-Al2Ox-Pb tunnel junctions doped with single molecule magnets J. R. Nesbitt Department of Physics, University of Florida Tunnel junctions have been fabricated in which the insulating barrier of Al-Al2OxPb have been doped with single molecule magnets. Low frequency resistance measurements show that the molecules are present in the insulating barrier. Th...

A surprisingly strong variation of resistance with a perpendicular magnetic field, and a peak in the resistance versus field, R(B) has been found in insulating films of a sequence of homogeneous, quench-condensed films of amorphous Bi undergoing a thickness-tuned superconductor-insulator transition. Isotherms of magnetoresistance, rather than resistance, versus field were found to cross at a we...

in this research work, alpha particle detector is made using semi-insulating gaas. a surface barrier detector with a semi-insulating gaas substrate at room temperature with pressure of 10-4 torr under -particle radiation with 5.48 mev of am241 source, have been under investigation. energy resolution of 2 and 3 mm schottky diameter have been matured and compared with the effect of voltage varia...

We present electrical transport and photoluminecence results for high mobility p-type GaAs/(AIGa)As systems. We observe transitions into an insulating state characterized by an activation energy and a threshold electrical field at a (density-dependent) Landau level filling factor. A new line also appears in the photoluminescence spectr~ at filling factors close to those at which the insulating ...

We report the remarkably improved crystal quality of semi-insulating GaN grown by metalorganic chemical vapor deposition on an AlN buffer layer, which is deposited on sapphire substrate. The electrical and structural properties are characterized by dark current–voltage transmission line model and X-ray diffraction measurements. It is found that the crystal quality of the GaN epilayer is strongl...