High speed and low power consumption are vital in ICs for high-speed optical communications systems. Some of the competing IC elements in this field include: Si-BJT (Silicon Bipolar Transistor), Si-CMOS (Silicon Field Effect Transistor), SiGe-BJT (Silicon Germanium Bipolar Transistor), GaAs-HBT (Gallium Arsenide Heterobipolar Transistor), GaAs-FET (Gallium Arsenide Field Effect Transistor), and...

Schottky diodes are fabricated on n-Aluminium Gallium Arsenide / Gallium Arsenide (n-AlGaAs/GaAs) high-electron-mobility-transistor (HEMT) structure due to availability of high electron mobility and capability of fast switching performance. The processing steps used in the fabrication are the conventional steps used in standard GaAs processing. The ohmic and Schottky contacts of Schottky diodes...

Optical systems are being developed to reach the functionality and large-scale integration of electronic systems. Strides are being made to develop an on-chip optical system by designing and fabricating an Optical NanoElectroMechanical, ONEM, device structure based in a gallium arsenide material system. Gallium arsenide, a III-V compound semiconductor, was chosen due to its high-refractive inde...

Gallium arsenide (GaAs) based microaccelerometers are being developed for guidance and navigation subsystems, and various microsensor systems. The microaccelerometer is a microelectromechanical system (MEMS) micromachined on top of GaAs substrate or GaAs integrated cirwits. The MEMS accelerometer is integrated on the same chip as the GaAs readout circuit and the GaAs analog to digital converter...

Gallium Arsenide (GaAs) based microsensors, analog readout electronics, analog to digital converters and digital signal processors have been in development. Microsensors include accelerometers, infrared sensors, and micromachines with high speed sensing response, extreme temperature operation, and high radiation hardness.

Indium arsenide (InAs) quantum dots (QDs) grown by molecular beam epitaxy (EBM) on gallium (GaAs) substrates have exhibited quantized charge-trapping characteristics.

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited...

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited...

The tremendous growth of communications systems in recent years has put a demand on the electronics industry to provide higher speed integrated circuits than are currently available with today's silicon technology. To help meet this demand, the electronics industry is developing new semiconductor materials such as gallium arsenide which already report clock frequencies of 1-3 GHz in GaAs integr...