The continuous scaling down of feature size in Silicon technology has resulted in several technological and fundamental hindrances. The researchers started to look for new nanoscale devices those can replace CMOS transistors in digital circuits. The nanowire transistor, FinFET, Carbon Nanotube field effect transistor (CNFET), tunnel field effect transistor (TFET), and single electron transistor...

Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometry-dependent threshold voltage is one of the CNFET characteristics, which is used in the proposed Full Adder cell. In this paper, we present a high speed Full Adder cell using CNFETs based on majority-not (Minority) function. Presented design uses eight transistors and eight ca...

Carbon Nanotube filed-effect transistor (CNFET) is one of the promising alternatives to the MOS transistors. The geometrydependent threshold voltage is one of the CNFET characteristics, which is used in the proposed design. In this paper, we present a novel high speed Adder-subtractor cell using CNFETs based on XOR gates and multiplexer. Presented design uses fourteen transistors, ten for full ...

Carbon Nanotube Field Effect Transistors (CNFETs) are being widely studied as the possible alternatives to the conventional silicon-MOSFETs. In this paper we have successfully designed the CNFET-based digital logic gates and compared them with the existing CMOS technology based logic gates. The designs are modeled using 32-nm technology for both CNFET and CMOS technology, using Stanford Univers...

Carbon Nanotube Field Effect Transistor (CNFET) is a promising new technology that overcomes several limitations of traditional silicon integrated circuit technology. In recent years, the potential of CNFET for analog circuit applications has been explored. This paper proposes a novel four quadrant analog multiplier design using CNFETs. The simulation based on 32nm CNFET technology shows that t...

In this paper, we describe the development of device models and tools for the design of the carbon nanotube FET (CNFET). Both HSPICE model and Verilog-A model for CNFET including typical device/circuit level non-idealities have been developed. They can be used for design of nanotube transistor circuits as well as to study performance benefits of the new transistor.

full adder cell is often placed in the critical path of other circuits. therefore it plays an important role in determining the entire performance of digital system. moreover, portable electronic systems rely on battery and low-power design is another concern. in conclusion it is a vital task to design high-performance and low-power full adder cells. since delay opposes against power consumptio...

Motivations of CMOS technology scaling are higher speed of operation, benefit of integration density and lower power dissipation. CMOS technology has crossed many hurdles over the past four decades. The aggressive technology scaling is causing device parameter variations, which is more severe than earlier. This paper carries out variability analysis of various popular exclusive-OR circuits at t...

The SRAM which functions as the cache for system-on-chip is vital in the electronic industry. Carbon Nanotube Field Effect Transistor (CNFET) is used for high performance, high stability and low-power circuit designs as an alternative material to silicon in recent years. Therefore Design of SRAM Cell based on CNTFET is important for Low-power cache memory. In cells, the bit-lines are the most p...

This article presents novel high speed and low power full adder cells based on carbon nanotube field effect transistor (CNFET). Four full adder cells are proposed in this article. First one (named CN9P4G) and second one (CN9P8GBUFF) utilizes 13 and 17 CNFETs respectively. Third design that we named CN10PFS uses only 10 transistors and is full swing. Finally, CN8P10G uses 18 transistors and divi...