نتایج جستجو برای: Zn-doping
تعداد نتایج: 64338 فیلتر نتایج به سال:
We report Zn-doping effect in the parent and F-doped LaFeAsO oxyarsenides. Slight Zn doping in LaFe1−xZnxAsO drastically suppresses the resistivity anomaly around 150 K associated with the antiferromagnetic (AFM) spin density wave (SDW) in the parent compound. The measurements of magnetic susceptibility and thermopower confirm further the effect of Zn doping on AFM order. Meanwhile Zn doping do...
A nanocrystalline TiO(2) film with highly dispersed Zn-doping shows its capability for efficient electron transport in dye-sensitized solar cells (DSSCs). The Zn-doping is conducted via Zn(2+) introduction into a layered titanate followed by hydrothermal treatment and calcination. The Zn-doped films exhibit an elevated electron Fermi level, which may enhance band bending to lower the density of...
Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanow...
We investigated the effect of Zn-doping on structural and optical properties as well as cellular response of TiO2 nanoparticles (NPs) in human breast cancer MCF-7 cells. A library of Zn-doped (1-10 at wt%) TiO2 NPs was prepared. Characterization data indicated that dopant Zn was incorporated into the lattice of host TiO2. The average particle size of TiO2 NPs was decreases (38 to 28 nm) while t...
Polycrystalline (Cu1-xZnx)2OSeO3 (0≤x≤0.2) samples were synthesized using solid-state reaction and characterized by X-ray diffraction (XRD). The effect of Zn doping upon saturation magnetization (MS) indicates that the Zn favors to occupying Cu(II) square pyramidal crystallographic site. The AC susceptibility (χ'ac) was measured at various temperatures (χ'ac-T) and magnetic field strengths (χ'a...
Surfactant effects are usually achieved by the addition of a single surface element. We demonstrate by first-principles calculations a dual-surfactant effect of Sb and H on enhancing Zn doping in organometallic vapor phase epitaxially grown GaP thin films. The combined effects of Sb and H lower significantly the doping energy of Zn in GaP, while neither Sb nor H can function alone as an effecti...
By performing first-principles calculation, we investigated the electronic properties of remotely p-type doping GaSb nanowire by a Zn-doped InAs shell. The results show that for bare zinc-blende (ZB) [111] GaSb/InAs core-shell nanowire the Zn p-type doped InAs shell donates free holes to the non-doped GaSb core nanowire without activation energy, significantly increasing the hole density and mo...
Structural and magnetic properties of a series of low doped Zn 1−x Co x O thin films deposited from Zn and Co metal targets on (0001) Al 2 O 3 substrates. Abstract We report on the synthesis of low doping Zn 1−x Co x O (0 < x < 0.1) thin films on (0001)-Al 2 O 3 substrates. The films were prepared in an oxidizing atmosphere, using the pulsed laser deposition technique starting from Zn and Co me...
We report the discovery of a new fluoride-arsenide bulk diluted magnetic semiconductor (Ba,K)F(Zn,Mn)As with the tetragonal ZrCuSiAs-type structure which is identical to that of the "1111" iron-based superconductors. The joint hole doping via (Ba,K) substitution &spin doping via (Zn,Mn) substitution results in ferromagnetic order with Curie temperature up to 30 K and demonstrates that the ferro...
Electrical and physical properties of a metal-oxide-semiconductor [MOS] structure using atomic layer-deposited high-k dielectrics (TiO2/Al2O3) and epitaxial GaAs [epi-GaAs] grown on Ge(100) substrates have been investigated. The epi-GaAs, either undoped or Zn-doped, was grown using metal-organic chemical vapor deposition method at 620°C to 650°C. The diffusion of Ge atoms into epi-GaAs resulted...
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