2009 WILEY-VCH Verlag Gmb Synthesis of materials with a desired crystal structure is a major challenge in materials engineering. Single-crystal thin films grown by epitaxy typically adopt the same crystal structure as that of their substrates. Here, we report on the observation of a wurtzite InAs thin-film structure on a zinc-blende InAs substrate. Electron-backscatter diffraction (EBSD) and tr...

We derive analytically the interface and confined polar optical-phonon modes for spherical quantum dots with wurtzite crystal structure. While the frequency of confined optical phonons in zincblende nanocrystals is equal to that of the bulk crystal phonons, the confined polar optical phonons in wurtzite nanocrystals are shown to have a discrete spectrum of frequencies different from those in bu...

We derive within the dielectric-continuum model an integral equation that defines interface and confined polar optical-phonon modes in nanocrystals with a wurtzite crystal structure. It is demonstrated theoretically that, while the frequency of confined polar optical phonons in zinc-blende nanocrystals is equal to that of the bulk crystal phonons, the confined polar optical phonons in wurtzite ...

We report the first successful synthesis and characterization of single-crystal wurtzite CdSe nanoribbons through a simple thermal evaporation process. Asymmetric growth of the nanoribbons occurs, yielding a sawlike shape with sharp teeth on one side. This asymmetric growth is suggested to be induced by the polarization of the c-plane in the wurtzite crystal structure.

We have used micro-photoand cathodo-luminescence at low temperatures to study the effects of sulphur doping in InP and radial InP/InAs/InP structured nanowires. Samples with pure wurtzite crystal structure, with modulated wurtzite/zincblende crystal structure and with different radial InAs growth times were investigated. We observed a doping concentration gradient along the nanowires, the locat...

Polar optical-phonon modes are derived analytically for spheroidal quantum dots with wurtzite crystal structure. The developed theory is applied to freestanding spheroidal ZnO quantum dots and to spheroidal ZnO quantum dots embedded into a MgZnO crystal. The wurtzite (anisotropic) quantum dots are shown to have strongly different polar optical-phonon modes in comparison with zincblende (isotrop...

Wurtzite AlN is widely used for deep ultraviolet optoelectronic devices (DUV), which are generally grown along the [0001]-direction of the wurtzite structure on currently available substrates. However, huge internal electrostatic fields are presented within the material along [0001] axis induced by piezoelectric and spontaneous polarization, which has limited the internal quantum efficiency of ...

The electrical properties, the spontaneous polarization, and the piezoelectric response of ZnO can be tailored by alloying ZnO with BeO for applications such as electrodes in flat panel displays and solar cells, blue and ultraviolet (UV) light emitting devices, and highly sensitive UV detectors. We present here the results of a study that employs density-functional theory to analyze the crystal...

The structural, vibrational, and electronic properties of GaAs nanowires have been studied in the metastable wurtzite phase via Resonant Raman spectroscopy and synchrotron X-ray diffraction measurements in diamond anvil cells under hydrostatic conditions between 0 and 23 GPa. The direct band gap E0 and the crystal field split-off gap E0 + Δ of wurtzite GaAs increase with pressure and their valu...

Valence electron energy loss spectroscopy (VEELS) was applied to determine band transitions in wurtzite InN, deposited by molecular beam epitaxy on (0001) sapphire substrates or GaN buffer layers. The GaN buffer layer was used as VEELS reference. At room temperature a band transition for wurtzite InN was found at (1.7G0.2 eV) and for wurtzite GaN at (3.3G 0.2 eV) that are ascribed to the fundam...