a complete procedure for the design of w-band low noise amplifier in mmic technology is presented. the design is based on a simultaneously power and noise matched technique. for implementing the method, scalable bilateral transistor model parameters should be first extracted. the model is also used for transmission line utilized in the amplifier circuit. in the presented method, input/output ma...

A personal communications service/wide-band code division multiple access (PCS/W-CDMA) dual-band monolithic microwave integrated circuit (MMIC) power amplifier with a single-chip MMIC and a single-path output matching network is demonstrated by adopting a newly proposed on-chip linearizer. The linearizer is composed of the base–emitter diode of an active bias transistor and a capacitor to provi...

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

In this study, a 1 W W-band solid-state power amplifier (SSPA) was developed for application in compact pulse Doppler radar. The SSPA up-converted the X-band signal to with multiplier (×8) and then amplified high output using an amplifier. To apply radar, which transmits receives signals single antenna, noise reduced by controlling drain voltage of according repetition frequencies. average obta...

This paper presents an effective design methodology and flow, which is validated through three mmwave/sub-mm-wave amplifiers: including W-band LNA with NF=7dB, W-band PA with PAE >11% and D-band amplifier with gain>20dB. The CMOS based amplifiers can be integrated with III-V materials to form heterogeneous integration, such as COSMOS, to achieve the best performance for various applications.

Concentrating on the high frequency aerospace demand of solid-state power amplifier (SSPA), this paper presents methodology and key technique a W-band 3-W SSPA that achieves efficiency while maintaining excellent reliability capability. An improved Magic-T combiner is utilized to achieve output power, eliminate influence parallel end-stage gallium-nitride high-electron-mobility-transistor (GaN ...

Background and Objectives: In this paper, a new design strategy was proposed in order to enhance bandwidth and efficiency of power amplifier. Methods: To realize the introduced design strategy, a power amplifier was designed using TSMC CMOS 0.18um technology for operating in the Ka band, i.e. the frequency range of 26.5-40GHz. To design the power amplifier, first a power divider (PD) with a ver...

A power amplifier (PA) is a key part of the RF front-end in transmitters for a local broadband network. Today, commercial PAs are made of III-V HEMT and HBT technology with excellent results. An integrated system-on-chip power amplifier circuit using CMOS technology for cost-effective and spectrum-efficient high-speed wireless communication presents major challenges because power amplifiers hav...

A new non-linear method for design and analysis of solid state power amplifiers is presented and applied to an aluminum gallium nitride, gallium nitride (AlGaN-GaN) high electron-mobility transistor (HEMTs) on silicon-carbide (SiC) substrate for Ku band (12.4 13.6 GHz) applications. With combining output power of 8 transistors, maximum output power of 46.3 dBm (42.6 W), PAE of 43% and linear ga...