in this study the synthesis of molybdenum oxide nano-whiskers with circular cross-section is performed. in some areas, it was observed that also some whiskers have open tips exhibiting their hollow structures. these whiskers have side dimensions ranging 2-5 μm with an average diameter in the nanometer rang. the structure suggested the vapor-liquid-solid growth mechanism (vls). scanning elect...

the aim of this research is preparation of sno2 nanowires by means of thermal chemical reaction vapor transport deposition (tcrvtd) method from sno powders. the morphology, chemical composition and microstructure properties of the nanowires are characterized using field emission scanning electron microscope (fe-sem), eds, and xrd. the xrd diffraction patterns reveal that the sno2 nanowires have...

Nanowires make possible to manipulate light in novel methods and thus are promising materials for advanced optoelectronics. To exploit the potential, the growth behavior has to be controlled since it dominates the physical and chemical states and, in turn, the optical properties of nanowires. In this chapter, the vapor–liquid–solid (VLS) mechanism for the growth and modulation of nanowires was ...

In this study the synthesis of molybdenum oxide nano-whiskers with circular cross-section is performed. In some areas, it was observed that also some whiskers have open tips exhibiting their hollow structures. These whiskers have side dimensions ranging 2-5 μm with an average diameter in the nanometer rang. The structure suggested the vapor-liquid-solid growth mechanism (VLS). Scanning elect...

UNLABELLED We grew silicon nanowires (SiNWs) by a vapor-liquid-solid (VLS) mechanism using metal catalysts of gold (Au), titanium (Ti), manganese (Mn), and iron (Fe) under a high flow rate of hydrogen (H2). This combination of catalyst types and high gas flow rate revealed the potential for growing various SiNWs, including kinked SiNWs (with Au), ultra-thin SiNWs having diameters about 5 nm (wi...

Knowledge of the catalyst concentration within vapor-liquid-solid (VLS) grown semiconductor wires is needed in order to assess potential limits to electrical and optical device performance imposed by the VLS growth mechanism. We report herein the use of secondary ion mass spectrometry to characterize the Au catalyst concentration within individual, VLS-grown, Si wires. For Si wires grown by che...

One-dimensional silicon nanowires (SiNWs) were prepared by electron beam evaporation in ultrahigh vacuum (UHV). The SiNWs can be grown through either vapor-liquid-solid (VLS) or oxide-assisted growth (OAG) mechanism. In VLS growth, SiNWs can be formed on Si surface, not on SiO2 surfaces. Moreover, low deposition rate is helpful for producing lateral SiNWs by VLS. But in OAG process, SiNWs can b...

The recently emerged selective lateral epitaxy of semiconductor planar nanowires (NWs) via the vapor-liquid-solid (VLS) mechanism has redefined the long-standing symbolic image of VLS NW growth. The in-plane geometry and self-aligned nature make these planar NWs completely compatible with large scale manufacturing of NW-based integrated nanoelectronics. Here, we report on the realization of per...