a complete procedure for the design of w-band low noise amplifier in mmic technology is presented. the design is based on a simultaneously power and noise matched technique. for implementing the method, scalable bilateral transistor model parameters should be first extracted. the model is also used for transmission line utilized in the amplifier circuit. in the presented method, input/output ma...

Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...

this study was designed to develop a modified tbi weight drop model for induction of focal mild cerebral injury. a stereotaxic coupled weight drop device was designed. principle arm of device carries up to 500g weights which their force was conveyed to animal skull through a thin nail like metal tip. to determine the optimal configuration of the device to induce mild tbi, six different trials w...

A complete procedure for the design of W-band low noise amplifier in MMIC technology is presented. The design is based on a simultaneously power and noise matched technique. For implementing the method, scalable bilateral transistor model parameters should be first extracted. The model is also used for transmission line utilized in the amplifier circuit. In the presented method, input/output ma...

is desirable ‘in many k.J high-frequency and switching applications of transistors. A single transient response measurement can, in principle, yield frequency response information over a range of frequencies of width determined by the short-time resolution of the transient response measurement and the duration of the measurement. Further, measurement of the response to a unit step or unit impul...

Thin-body p-channel MOS transistors with a SiGe/Si heterostructure channel were fabricated on silicon-on-insulator (SOI) substrates. A novel lateral solid-phase epitaxy process was employed to form the thin-body for the suppression of shortchannel effects. A selective silicon implant that breaks up the interfacial oxide was shown to facilitate unilateral crystallization to form a single crystal...

Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device scaling. High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, mini...