ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed comp...

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. ...

The weak photon absorption and fast carrier kinetics of graphene limit its application in photodetection. This limitation can be overcome by introducing photosensitive nanostructures to graphene. Herein we report the synthesis of a ZnO nanorod/graphene heterostructure by a facile in situ solution growth method. By combining the attributes of photosensitive ZnO nanorods and highly conductive gra...

A method employing conjugated polymer thin film blends is shown to provide a simple and convenient way of greatly enhancing the ultraviolet response of silicon photodetectors. Hybrid organic semiconductor/silicon photodetectors are demonstrated using fluorene copolymers and give a quantum efficiency of 60% at 200 nm. The quantum efficiency is greater than 34% over the entire 200-620 nm range. T...

Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and ma...

In semiclassical theory, light is a classical electromagnetic wave and the fundamental source of photodetection noise is the shot effect arising from the discreteness of the electron charge. In quantum theory, light is a quantum-mechanical entity and the fundamental source of photodetection noise comes from measuring the photon-flux operator. The Glauber coherent states are Gaussian quantum sta...

ZnO nanorods with various lengths were synthesized by a two-stage route (by changing the time of growth between 0-240 min) and were characterized using XRD, SEM, UV–Vis and PL techniques. The SEM and XRD results confirmed a fast growth of (0 0 2) plane in the preferential longitudinal orientation, in contrast to lateral growth and therefore, by increasing the time of hydrothermal growth, nanoro...

For practical applications, increasing the photosensitivity, response speed, and selectivity of UV photodetectors is a prerequisite. Many research studies on Si-based photodiodes, the most common devices for UV detection, have been conducted to improve their photosensitivity. The calculated photoresponsivities of these devices were typically less than 10 A W . Although these studies showed an i...