The optical characteristics of an indirect type II transition in a series of size and shape-controlled linear CdTe/CdSe/CdTe heterostructure nanorods was studied by steady state and time resolved photoluminescence spectra. The energy and lifetime of the photoluminescence from the charge-separated band structure can be tuned by the band edges of the nanorods. Our results show a size-dependent tr...

In this paper, we synthesized a novel type II cuprous sulfide (Cu(2)S)-indium sulfide (In(2)S(3)) heterostructure nanocrystals with matchstick-like morphology in pure dodecanethiol. The photovoltaic properties of the heterostructure nanocrystals were investigated based on the blends of the nanocrystals and poly(2-methoxy-5-(2'-ethylhexoxy)-p-phenylenevinylene) (MEH-PPV). In comparison with the ...

We report a van der Waals heterostructure formed by monolayers of MoS2 and ReS2 with a type-I band alignment. First-principle calculations show that in this heterostructure, both the conduction band minimum and the valence band maximum are located in the ReS2 layer. This configuration is different from previously accomplished type-II van der Waals heterostructures where electrons and holes resi...

Multiexciton generation, by which more than a single electron-hole pair is generated on optical excitation, is a promising paradigm for pushing the efficiency of solar cells beyond the Shockley-Queisser limit of 31%. Utilizing this paradigm, however, requires the onset energy of multiexciton generation to be close to twice the band gap energy and the efficiency to increase rapidly above this on...

The rate of interband electron transitions assisted by LO-phonon emission is studied in an InAs/ GaSb double quantum well heterostructure, which models the active region of a type-II intersubband cascade laser. The main peak of the electron-phonon resonance corresponds to electron transitions from the lowest electron-like subband to the top of the highest light-hole-like subband that is displac...

A novel one-step cation exchange approach has been developed to prepare ZnO-decorated ZnSe nanorods (ZnSe-ZnO NRs), a prototype type-II semiconductor nanoheterostructure. Because of the staggered band offset which promoted effective charge separation, the as-synthesized ZnSe-ZnO NRs exhibited remarkable photocatalytic activities under visible light illumination, demonstrating their promising po...

Heterostructures based on new advanced materials offer a cornerstone for future optoelectronic devices with improved photoelectric performance. Band alignment is crucial understanding the mechanism of charge carrier transportation and interface dynamics in heterostructures. Herein, we grew SnS2/Bi2X3 (X = Se, Te) van der Waals heterostructures by combining physical vapor deposition chemical dep...

The potential to extend the emission wavelength of photonic devices further into the near- and mid-infrared via pseudomorphic growth on conventional GaAs substrates is appealing for a number of communications and sensing applications. We present a new class of GaAs-based quantum well (QW) heterostructure that exploits the unusual impact of Bi and N on the GaAs band structure to produce type-II ...

Herein, we report multi-element doped Type-II heterostructure assembly consists of N, S doped TiO2 and ZnO for electrochemical crystal violet dye degradation studies. Electrochemical measurements were performed on these synthesized N-S codoped TiO2/ZnO compositeheterostructured assemblies which are fabricated on Titanium (Ti) substrate. It was observed that a composite ele...