نتایج جستجو برای: Tunneling Field Effect

تعداد نتایج: 2345540  

Journal: :Journal of Physics and Chemistry of Solids 2019

Journal: :Composants nanoélectroniques 2018

2012
Peter Matheu

Investigations of Tunneling for Field Effect Transistors

Journal: :Nano letters 2012
Son T Le P Jannaty Xu Luo A Zaslavsky Daniel E Perea Shadi A Dayeh S T Picraux

We present silicon-compatible trigated p-Ge/i-Si/n-Si axial heteronanowire tunneling field-effect transistors (TFETs), where on-state tunneling occurs in the Ge drain section, while off-state leakage is dominated by the Si junction in the source. Our TFETs have high I(ON) ~ 2 μA/μm, fully suppressed ambipolarity, and a subthreshold slope SS ~ 140 mV/decade over 4 decades of current with lowest ...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه یاسوج - دانشکده علوم 1391

in this investigation the effect of external field on the electron density of nanostructures of cds, cdse, cdte, gaas and polymeric structure of three, four, five and six units of cds as a kind of nanosolar cells has been studied theoretically. as modeling this system in nanodimension, molecular structures has used. specific properties of molecular structures permit us to consider different sym...

 In the last decade, Si(100) has been used as a suitable substrate in field effect transistors. Some issues such as leakage current and tunneling current through the ultrathin films have been increased with shrinking the electronic devices – particularly, field effect transistors – to nanoscale, which is threatening more use of Si(100). We have thus demonstrated a series of experiments to grow ...

Journal: :ACS nano 2014
Saptarshi Das Abhijith Prakash Ramon Salazar Joerg Appenzeller

In this article, we explore, experimentally, the impact of band-to-band tunneling on the electronic transport of double-gated WSe2 field-effect transistors (FETs) and Schottky barrier tunneling of holes in back-gated MoS2 FETs. We show that by scaling the flake thickness and the thickness of the gate oxide, the tunneling current can be increased by several orders of magnitude. We also perform n...

2013
Jiun-Yun Li

The dependence of band-to-band tunneling in p+-Si1−xGex /n+-Si1−xGex homojunctions on Ge fraction and electric field is investigated in the range 2–3×108 V/m. Negative differential resistance (NDR) in forward bias is observed for each device with the highest peak tunneling-current density of 8.2 kA/cm2 without any postannealing step. Reverse-biased band-to-band tunneling, as relevant for tunnel...

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