pure and antimony doped sno2 thin films have been prepared by the sol-gel dip coating technique on glass substrate using starting material sncl2.2h2o as a host and sbcl3 as a dopant. our experimental results revealed that, the quality of the coated films on the glass depends on process parameters. the effect of annealing temperature, dipping numbers and the dopant concentration on the structura...

The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide sa...

In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type ti...

Tin-oxide and graphene (TG) composites were fabricated using the Electrostatic Spray Deposition (ESD) technique, and tested as anode materials for Li-ion batteries. The electrochemical performance of the as-deposited TG composites were compared to heat-treated TG composites along with pure tin-oxide films. The heat-treated composites exhibited superior specific capacity and energy density than ...

semiconductor nanoparticles exhibit size dependent properties due to quantum confinement effect that arenot present in their bulk counterparts. in this work, extremely fine and pure sno2 nanoparticles of ~1.1nm size were synthesized by a solution process, in which amorphous precipitate of sno2 was crystallizedby microwave heating. the particles sizes varied from ~1.1 to ~2.7 nm. by xrd analysis...

the improvement of the physical properties of indium tin oxide (ito) layers is quite advantageous in photovoltaic applications. in this study the ito film is deposited by rf sputtering onto p-type crystalline silicon (c-si) with (100) orientation, multicrystalline silicon (mc-si), and glass substrates coated with zno and annealed in vacuum furnace at 400°c. electrical, optical, structural and m...

Tin(IV) oxide functions as an abrasive, bulking, and opacifying agent in cosmetic products and is used at concentrations up to 0.4% in rinse-off products and up to 1.3% in leave-on products. The Cosmetic Ingredient Review Expert Panel (Panel) noted that tin(IV) oxide is a water-insoluble inorganic metal compound and should not be percutaneously absorbed; therefore, systemic exposure is not like...

Indium tin oxide thin films with different thicknesses were deposited on polymer substrates, held at room temperature, using electron beam evaporation. The dependence of structural properties, optical properties and room temperature resistivity on the indium tin oxide film thickness was studied. X-ray diffraction illustrates the amorphous structure for all the indium tin oxide prepared films. T...