in  this paper  thin  films of  tin sulfide (sns) were deposited on  the glass substrates using spray pyrolysis method with the substrate temperatures in the range of 400–600℃, keeping the other deposition parameters constant. in  this work  the characteristic of sns  thin  films  investigated. the xrd pattern and optical transmittance of thin films also are discussed. with the change in concen...

In  this paper  thin  films of  tin sulfide (SnS) were deposited on  the glass substrates using spray pyrolysis method with the substrate temperatures in the range of 400–600℃, keeping the other deposition parameters constant. In  this work  the characteristic of SnS  thin  films  investigated. The XRD pattern and optical transmittance of thin films also are discussed. With the change in concen...

To evaluate the fracture strength of TiN thin films deposited on the hard metal substrate WC-Co, and to investigate the influence of the deposition conditions (bias voltage VB) on the fracture strength of TiN thin films, the sphere indentation test was carried out to determine the ring crack initiation strength σf,m in TiN thin films deposited on two kinds of WC-Co substrates differing in hardn...

TiN thin films were deposited on MgO (100) substrates at different substrate temperatures using rf sputtering with Ar/N2 ratio of about 10. At 700°C, the growth rate of TiN was approximately 0.05 μm/h. The structural and electrical properties of TiN thin films were characterized with x-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electro...

Graphene oxide (GO) thin films were simply deposited on fluorine doped tin oxide (FTO) substrate via a low-voltage electrodeposition. The GO and GO thin films were characterized by Zeta Potential, X-ray diffraction, Ultraviolet-Visible spectroscopy, atomic force microscopy, Fourier transform infrared spectroscopy, field emission scanning electron microscopy and energy dispersive X-ray spectrosc...

Cu2ZnSnSe4 (CZTSe) thin films are prepared by the electrodeposition of stack copper/tin/zinc (Cu/Sn/Zn) precursors, followed by selenization with a tin source at a substrate temperature of 530°C. Three selenization processes were performed herein to study the effects of the source of tin on the quality of CZTSe thin films that are formed at low Se pressure. Much elemental Sn is lost from CZTSe ...

Nanocrystalline TiN/NiTi thin films have been grown on silicon substrate by dc magnetron sputtering to improve the corrosion and mechanical properties of NiTi based shape memory alloys without sacrificing the phase transformation effect. Interestingly, the preferential orientation of the TiN films was observed to change from (1 1 1) to (2 0 0) with change in nature of sputtering gas from 70% Ar...

A low level tin doped indium oxide, ITO, (ca. 10 w % SnO2) thin films were prepared on glass substrate by electron beam technique. Deposited films with deposition rate of 0.1–0.25 nm s were annealed at different temperatures from 250 to 550 °C in air. The thin films were characterized using low and high angle X-ray diffraction and UV-visible spectroscopy. The lattice constant and the grain size...

Tin oxide (SnO2) thin films are widely used by solgel method. One of the most important factors that influence the sensitivities of sensing material is its structural properties especially surface morphology. In this work, we present preparation and characterization of undoped and antimony-doped tin oxide (Sb: SnO2) thin film nanostructures for gas sensing applications. The films were character...