nanosized al2o3 powder is synthesized by thermal metal organic chemical vapor deposition (mocvd)combined withplasma. the effects of reaction temperature, pressure, al(ch3)3 (tma) concentration and reactant gases (co2 and o2) on the characteristics of the synthesized al2o3 powders are investigated. the experimental results demonstrate that very fineal2o3 powders with mean particle size of about ...

This work represents a complete study of GaN annealed in H2, HCl, NH3 and N2. The GaN thermal behavior was evaluated by comparison of MOCVD and HVPE samples. The MOCVD films were found to obey a dissociative sublimation mechanism with only gaseous species forming, while the HVPE films reacted with ambient gases to form condensed Ga in addition to the gaseous species. Differences in crystal qual...

This work represents a complete study of GaN annealed in H2, HCl, NH3 and N2. The GaN thermal behavior was evaluated by comparison of MOCVD and HVPE samples. The MOCVD films were found to obey a dissociative sublimation mechanism with only gaseous species forming, while the HVPE films reacted with ambient gases to form condensed Ga in addition to the gaseous species. Differences in crystal qual...

The metalorganic chemical vapor deposition (MOCVD) process for electronic and photonic compound semiconductor materials and devices is reviewed. We begin with an introduction to the basic MOCVD chemical reaction process, gas delivery equipment, reaction chambers, and safety. Growth mechanisms, including hydrodynamics, boundary-layer issues, thermal effects, and pyrolysis reactions, are defined,...

With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10(8) cm(-2). X-ray photoelectron spectroscopy (XPS) analysis...

Nanosized Al2O3 powder is synthesized by thermal Metal Organic Chemical Vapor Deposition (MOCVD)combined withplasma. The effects of reaction temperature, pressure, Al(CH3)3 (TMA) concentration and...

Zirconia layers are often used as thermal barriers. In recent years, depositions by chemical vapor deposition methods using a metalorganic precursor (MOCVD) have been primarily investigated. Here, we combine MOCVD with plasma activation - plasma-enhanced (PECVD]) of the gas phase and/or growth surface to lower temperature and allow for flexible coating design. PECVD causes be transformed into c...

To improve the performance of metalorganic chemical vapor deposition (MOCVD)-grown long wavelength InGaAsN quantum well (QW) diode lasers emitting beyond 1.3 mm, a detailed examination of the growth parameters was performed, including DMHy/V ratio, QW growth temperature, choice of barrier material and thermal annealing temperature. This study reveals that a growth temperature in the 530–540 1C ...

Conventional and Pulsed Liquid Injection MOCVD processes (C-MOCVD and PLI-MOCVD) have been explored as synthetic routes for the growth of BaMgF4 on Si (100) and single crystalline SrTiO3 (100) substrates. For the two applied approaches, the volatile, thermally stable β-diketonate complexes Ba(hfa)2tetraglyme and Mg(hfa)2(diglyme)2(H2O)2 have been used as single precursors (C-MOCVD) or as a solu...