the effect of temperature variation on the growth of carbon nanotubes (cnts) using thermal chemical vapor deposition (tcvd) is presented. nickel and cobalt (ni-co) thin films on silicon (si) substrates were used as catalysts in tcvd technique. acetylene gas was used in cnts growth process at the controlled temperature ranges from 850-1000 ̊ c. catalysts and cnts characterization was carried out ...

The growth behavior of carbon nanotubes synthesized from C2H2 at the temperature range of 700 to 900°C and using thermal chemical vapor deposition (TCVD) method has been investigated. Thin films of nickel (Ni) catalyst, were coated on SiO2 substrates by ion beam sputtering technique. The formation of catalytic nickel nanoparticles was much increased when using NH3 as the environment gas which i...

In this research, the effect of catalyst type on the CNTs synthesis was investigated. The carbonnanotubes (CNTs) were produced on stainless steel substrates and two of catalyst with differentcharacteristics by using Thermal chemical vapor deposition (TCVD) method. The catalysts have theimportant role for the growth carbon nanotubes (CNTs). Acetylene gas (C2H2) diluted by NH3 wasused as the reac...

The effect of temperature variation on the growth of Carbon Nanotubes (CNTs) using Thermal Chemical Vapor Deposition (TCVD) is presented. Nickel and Cobalt (Ni-Co) thin films on Silicon (Si) substrates were used as catalysts in TCVD technique. Acetylene gas was used in CNTs growth process at the controlled temperature ranges from 850-1000 ̊ C. Catalysts and CNTs characterization was carried out ...

in this research, the effect of catalyst type on the cnts synthesis was investigated. the carbonnanotubes (cnts) were produced on stainless steel substrates and two of catalyst with differentcharacteristics by using thermal chemical vapor deposition (tcvd) method. the catalysts have theimportant role for the growth carbon nanotubes (cnts). acetylene gas (c2h2) diluted by nh3 wasused as the reac...

The effect of temperature variation on the growth of Carbon Nanotubes (CNTs) using Thermal Chemical Vapor Deposition (TCVD) is presented. Nickel and Cobalt (Ni-Co) thin films on Silicon (Si) substrates were used as catalysts in TCVD technique. Acetylene gas was used in CNTs growth process at the controlled temperature ranges from 850-1000 ̊ C. Catalysts and CNTs characterization was carried out ...

using c2h2, 112 and as gases at 550'c, carbon nanotubes were fabricated on the surfaces of twosubstrates coated by nano thin layers of metal catalysts by dc magnetron sputtering. aystamless steel andfe/cteal, by thermal chemical vapor deposition (tcvd) the surface properties of the substrates wereparticularly investigated, and the effect of treatment of the substrates on the cnt's growth is cri...

Using C2H2, 112 and As gases at 550'C, carbon nanotubes were fabricated on the surfaces of twosubstrates coated by nano thin layers of metal catalysts by DC magnetron sputtering. AYStamless steel andFe/CteAl, by thermal chemical vapor deposition (TCVD) The surface properties of the substrates wereparticularly investigated, and the effect of treatment of the substrates on the CNT's growth is cri...

We carried out the carbon nanotubes (CNTs) growth from an Au catalyst with two different kinds of chemical vapor deposition (CVD) methods. In case of thermal CVD (TCVD), high quality single-walled carbon nanotubes (SWNTs) can be grown. On the other hand, only poorly crystallized CNTs are synthesized with plasma CVD (PCVD). Through the parametric investigations, it is found that the hydrogen gas...

The feasibility of using carbon nanotube (CNT) bundles as the fillers of through silicon vias (TSVs) has been demonstrated. CNT bundles are synthesized directly inside TSVs by thermal chemical vapor deposition (TCVD). The growth of CNTs in vias is found to be highly dependent on the geometric dimensions and arrangement patterns of the vias at atmospheric pressure. The CNT-Si structure is planar...