Both TaNx and WNxare candidates for copper liner applications. A thermal CVD process for the deposition of WNxliners, as well as both thermal CVD and plasma-assisted CVD processes for the deposition of TaNx, have been developed, all of which are carried out at wafer temperatures under 425°C. The basic material properties, conformality, thermal stability, and integration and diffusion barrier pr...

The growth of graphene on Ni using a photo-thermal chemical vapour deposition (PT-CVD) technique is reported. The non-thermal equilibrium nature of the PT-CVD process resulted in a much shorter duration of the overall growth time for graphene in both the heating up and cooling down stages, thus allowing for the reduction. Despite the reduced time for synthesis compared to standard thermal chemi...

GeSii infrared detectors grown by Rapid Thermal CVD are demonstrated. External quantum efficiency of7% at A=1.32jtm and eye-diagram at 1.5Gbit/s are obtained for Ge2Si71 waveguide pin detectors. It is shown that external quantum efficiency is limited by the fiber to waveguide coupling efficiency. These, along with system considerations suggest that with further improvements, such devices can be...

Graphene, the crystalline allotrope of Carbon has phenomenal electrical properties and hence a number of application prospects. Multi-Layered Graphene (MLG) has tremendous application prospects as gas sensors. Thermal CVD performed at atmospheric pressure is a very simple and affordable synthesis technique for growing MLG. In this project we characterized Thermal-CVD grown MLG films with the At...

Using a conventional thermal chemical vapor deposition (CVD) system, ethanol vapor was enclosed in a reactor, i.e., no flow, with Co/Mo dip-coated quartz substrates to synthesize submillimeter long vertically aligned single-walled carbon nanotube (SWNT) films successfully. The no-flow CVD method yielded an increase in film thickness of up to 0.11 mm compared with the normal flowing gas method f...

To improve the understanding on CNT growth modes, the various processes, including thermal CVD, MP-CVD and ECR-CVD, have been used to deposit CNTs on nanoporous SBA-15 and Si wafer substrates with C(2)H(2) and H(2) as reaction gases. The experiments to vary process parameter of DeltaT, defined as the vector quantities of temperature at catalyst top minus it at catalyst bottom, were carried out ...

Self-heating induced failure of graphene devices synthesized from both chemical vapor deposition (CVD) and epitaxial means is compared using a combination of infrared thermography and Raman imaging. Despite a larger thermal resistance, CVD devices dissipate >3x the amount of power before failure than their epitaxial counterparts. The discrepancy arises due to morphological irregularities implic...

Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD...

We report hot filament thermal CVD (HFTCVD) as a new hybrid of hot filament and thermal CVD and demonstrate its feasibility by producing high quality large area strictly monolayer graphene films on Cu substrates. Gradient in gas composition and flow rate that arises due to smart placement of the substrate inside the Ta filament wound alumina tube accompanied by radical formation on Ta due to pr...