The metal-assisted chemical etching (MACE) was used to synthesis silicon nanowires. The effect of etchant concentration, etching and chemical plating time and doping density on silicon nanowires length were investigated. It is held that the increasing of HF and H2O2 concentrations lead to etching rate increment and formation of wire-like structure. The results show that, the appropriate ratio o...

We investigate the transport properties of silicon nanowires coated with zinc sulfide nanoparticles. Silicon nanowires were prepared by metal assisted electro-less chemical etching technique. The diameter of nanowires varies from 30 to 300 nm and length was 30 mm. Zinc sulfide nanoparticles having diameter 30 nm were synthesized by co-precipitation method. The nanoparticles were then deposited ...

Nanowires have been taken much attention as a nanoscale building block, which can perform the excellent mechanical function as an electromechanical device. Here, we have performed atomic force microscope (AFM)-based nanoindentation experiments of silicon nanowires in order to investigate the mechanical properties of silicon nanowires. It is shown that stiffness of nanowires is well described by...

Porous silicon nanowires are synthesized through metal assisted wet-chemical etch of highly-doped silicon wafer. The resulted porous silicon nanowires exhibit a large surface area of 337 m(2)·g(-1) and a wide spectrum absorption across the entire ultraviolet, visible and near infrared regime. We further demonstrate that platinum nanoparticles can be loaded onto the surface of the porous silicon...

The performance of silicon for water oxidation and hydrogen production can be improved by exploiting the antireflective properties of nanostructured silicon substrates. In this work, silicon nanowires were fabricated by metal-assisted electroless etching of silicon. An enhanced photocurrent density of -17 mA/cm² was observed for the silicon nanowires coated with an iron sulphur carbonyl catalys...

Modification of the electrical transport of a random network of silicon nanowires assembled on n‐ silicon support, after silicon nanowires functionalization by chlorination/alkylation procedure , is here described and discussed. We show that the organic functionalities induce charge transfer at single SiNW and produce doping‐like effect that is kept in the rando...

Silicon nitride nanowires were synthesized using silicon monoxide as raw materials and an alumina plate as substrate at 1500°C. The obtained nanowires were characterized by X-ray diffraction, Fourier transform infrared spectrosco‐ py, scanning electron microscopy, high-resolution trans‐ mission electron microscopy and thermogravimetricdifferential scanning calorimetry. The results revealed that...

We report simultaneous lateral growth of a high density of highly oriented, metal-catalyzed silicon nanowires on a patterned silicon substrate and bridging of nanowires between two vertical silicon sidewalls, which can be developed into electrodes of an electronic device. After angled deposition of catalytic metal nanoparticles on one of two opposing vertical silicon surfaces, we used a metal-c...

We have demonstrated a new PEDAL process to make sub-25 nm nanowires template across the entire Silicon (110) wafer suitable for wafer-scale nanoimprinting. The “PEDAL lift-off” has the ability to fabricate metal nanowires directly on the wafers without using nanoimprint techniques. The process involves defining the edge by etching a trench, patterned using conventional i-line lithography, and ...

This paper shows that the reflectance in silicon nanowires (SiNWs) can be optimized as a function of the area of silicon substrate where the nanostructure growth. SiNWs were fabricated over four different areas of silicon substrates to study the size effects using electroless etching technique. Three different etching solution concentrations of silver nitrate (AgNO3) and hydroflu...