the surface and interfacial analysis of silicon oxide film on silicon substrate is particularly crucial in the nano-electronic devices. for this purpose, series of experiments have been demonstrated to grow oxide film on si (111) substrate. then these films have been used to study the structure of the film by using x-ray photo emission spectroscopy (xps) technique. the obtained results indicate...

The surface and interfacial analysis of silicon oxide film on silicon substrate is particularly crucial in the nano-electronic devices. For this purpose, series of experiments have been demonstrated to grow oxide film on Si (111) substrate. Then these films have been used to study the structure of the film by using X-ray photo emission spectroscopy (XPS) technique. The obtained results indicate...

In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

The rapid melting of silicon film due to the absorption of a CW laser beam radiation is studied. The silicon film melting and recrystallization is mainly controlled by the temperature distribution in the semiconductor. The enthalpy technique for the solution of phase change problems is used in an explicit finite difference form to calculate the transient temperature distribution in the silicon ...

Articles you may be interested in A model of electrical conduction across the grain boundaries in polycrystalline-silicon thin film transistors and metal oxide semiconductor field effect transistors Polycrystalline silicon thin-film transistors with location-controlled crystal grains fabricated by excimer laser crystallization Appl. Improvement of the electrical performance in metal-induced lat...

Fully-depleted SOI devices are being considered for low power applications due to their threshold voltage, sub-threshold slope and capacitance advantages over other technologies. However, the threshold voltage of a fully-depleted SOI device is a strong function of the silicon film and sacrificial oxide thicknesses. Thus, to fully realize the advantages of fully-depleted SOI devices in commercia...

rapid thermal processing (rtp) has become a key technology for semiconductor device manufacturing in a variety of applications, such as thermal oxidation, annealing, and thin-film growth. hence, understanding the radiative properties of silicon and other relevant materials is essential for the analysis of the thermal transport processes. we have analyzed and calculated the spectral, directional...

Porous silicon layers were elaborated by electrochemical etching of heavily doped p-type silicon substrates. Metallization of porous silicon was carried out by immersion of substrates in diluted aqueous solution of nickel. Amorphous silicon thin films were deposited by plasma-enhanced chemical vapor deposition on metalized porous layers. Deposited amorphous thin films were crystallized under va...

Herein we report the demonstration of electrochemical deposition of silicon p-n junctions all in molten salt. The results show that a dense robust silicon thin film with embedded junction formation can be produced directly from inexpensive silicates/silicon oxide precursors by a two-step electrodeposition process. The fabricated silicon p-n junction exhibits clear diode rectification behavior a...