Related Articles The Si3N4/TiN Interface: 4. Si3N4/TiN(001) Grown with a −250 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 62 (2012) The Si3N4/TiN Interface: 1. TiN(001) Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 33 (2012) The Si3N4/TiN Interface: 5. TiN/Si3N4 Grown...

Related Articles The Si3N4/TiN Interface: 4. Si3N4/TiN(001) Grown with a −250 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 62 (2012) The Si3N4/TiN Interface: 1. TiN(001) Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 33 (2012) The Si3N4/TiN Interface: 5. TiN/Si3N4 Grown...

Related Articles The Si3N4/TiN Interface: 4. Si3N4/TiN(001) Grown with a −250 V Substrate Bias and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 62 (2012) The Si3N4/TiN Interface: 1. TiN(001) Grown and Analyzed In situ using Angle-resolved X-ray Photoelectron Spectroscopy Surf. Sci. Spectra 19, 33 (2012) The Si3N4/TiN Interface: 5. TiN/Si3N4 Grown...

We simulated capacitance–voltage (C – V) curves of Si3N4 /GaAs, Si3N4 /Si and also Si3N4 /Semi* ~virtual semiconductor! metal–insulator–semiconductor ~MIS! capacitors and compared them with experimental C – V curves of a Si3N4 /Si/GaAs structure. The experimental C – V curves of the Si3N4 /Si/GaAs MIS capacitors are not in agreement with the simulated C – V curves of the Si3N4 /GaAs and Si3N4 /...

ZrN/Si3N4 multilayer coating that alternates with either nanocrystalline ZrN or amorphous Si3N4 interlayers was fabricated by reactively magnetron sputtering in an Ar-N2 mixture atmosphere. The thicknesses of the nanocrystalline ZrN and the amorphous Si3N4 interlayers are ~12.5 and 2.5 nm, respectively. The ZrN/Si3N4 coating exhibits a promoted hardness of 28.6 ± 1.2 GPa when compared to the bi...

The joining of porous Si3N4 to dense Si3N4 ceramics has been successfully performed using mixed RE2O3 (RE = Y or Yb), Al2O3, SiO2, and α-Si3N4 powders. The results suggested that the α-Si3N4 powders partly transformed into β-SiAlON and partly dissolved into oxide glass to form oxynitride glass. Thus, composites of glass/β-SiAlON-ceramic formed in the seam of joints. Due to the capillary action ...

Silicon nitride (Si3N4) is an industrial ceramic used in spinal fusion and maxillofacial reconstruction. Maximizing bone formation and minimizing bacterial infection are desirable attributes in orthopedic implants designed to adhere to living bone. This study has compared these attributes of Si3N4 implants with implants made from two other orthopedic biomaterials, i.e. poly(ether ether ketone) ...

Advanced engineered matrix composites (EMCs) require that the coefficient of thermal expansion (CTE) of the engineered matrix (EM) matches those of the fiber reinforcements as closely as possible in order to reduce thermal compatibility strains during heating and cooling of the composites. The present paper proposes a general concept for designing suitable matrices for long fiber reinforced com...

Optical detection of graphene on a specific substrate is important for the analysis of the physical or chemical properties of graphene. Si3N4, an oxygen free substrate with high dielectric constant, is a good candidate to replace SiO2. In this letter, we report the optimization of the Si3N4 thickness for efficient optical characterization by means of the contrast, enhancement factor (F), and th...