Graphene-semiconductor interface is important for the applications in electronic and optoelectronic devices. Here we report the modulation of the electric transport properties of graphene/ZnO nanowire Schottky diode by gate voltage (Vg). The ideality factor of the graphene/ZnO nanowire Schottky diode is ~1.7, and the Schottky barrier height is ~0.28 eV without external Vg. The Schottky barrier ...

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The p-n junction cannot be implemented at the nanoscale because the doping is very often a detrimental effect. The doping could change dramatically the properties of a nanomaterial such as graphene or single-walled carbon nanotubes. Therefore, we will present two graphene diodes without a p-n junction. The first is based on the dissimilar metals having workfunction below and above the graphene ...

In this paper, we develop a 94-GHz single balanced mixer with low conversion loss using planar Schottky diodes on a GaAs substrate. The GaAs Schottky diode has a nanoscale anode with a T-shaped disk that can yield high cutoff frequency characteristics. The fabricated Schottky diode with an anode diameter of 500 nm has a series resistance of 21 Ω, an ideality factor of 1.32, a junction capacitan...

The electronic parameters and interface state properties of Yb/p-InP Schottky diode have been investigated by current­voltage (I­V), capacitance­voltage­frequency (C­V­f ) and conductance­voltage­frequency (G­V­f ) measurements at room temperature. The barrier height and ideality factor of the Yb/p-InP Schottky diode are found to be 0.68 eV (I­V)/0.79 eV (C­V) and 1.24, respectively. As well, t...

The metal-insulator-semiconductor (MIS) diode is the most useful device in the study of semiconductor surfaces. The current-voltage data of the metal-insulatorsemiconductor Schottky diode are simulated using thermionic emission diffusion equation taking into account the interfacial layer parameters. The calculated current–voltage data are fitted into ideal thermionic emission diffusion equation...

Planar GaAs Schottky diode based multiplier chains driven by HEMT power amplifiers have now demonstrated useful power beyond the 1 THz range. This paper will briefly review the state-of-the-art in planar Schottky diode multiplier chains for coherent detection. Future challenges and promising emerging technologies will also be outlined.

In this paper, fabrication and study of electronic properties of Au/methyl-red/Ag surface type Schottky diode by current-voltage (I-V) method has been reported. The I-V characteristics of the Schottky diode showed the good rectifying behavior. The values of ideality factor n and barrier height b of Au/methyl-red/Ag Schottky diode were calculated from the semi-log I-V characteristics and by usin...

Present work is an effort to reveal the junction properties of gold (Au) / Zinc oxide (ZnO) nanorods based Schottky diode by using the frequency dependent electrical properties. The most important electrical parameters such as conductance (G), resistance (R), capacitance (C) and impedance (Z) were studied as function of frequency across the series of AC voltages. Moreover, current density-volta...