Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are ...

cdse nanostructures were synthesized by using green chemical route as starch was used as capping agent. xrd, hr-tem, sead, uv and pl studies were made for structural and optical properties of the prepared sample. film morphology and the thickness measurement of n-cdse were carried out with afm analysis. i-v characteristics curve of this junction confirmed the formation of schottky contact betwe...

Schottky barriers formed by graphene (monolayer, bilayer, and multilayer) on 2D layered semiconductor tungsten disulfide (WS2) nanosheets are explored for solar energy harvesting. The characteristics of the graphene-WS2 Schottky junction vary significantly with the number of graphene layers on WS2, resulting in differences in solar cell performance. Compared with monolayer or stacked bilayer gr...

Germanium nanowire (GeNW)-positioned Schottky solar cell was fabricated by a solution process. A GeNW-containing solution was spread out onto asymmetric metal electrodes to produce a rectifying current flow. Under one-sun illumination, the GeNW-positioned Schottky solar cell yields an open-circuit voltage of 177 mV and a short-circuit current of 19.2 nA. Schottky and ohmic contacts between a si...

A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...

We examine the photo-assisted polarization loop in a BiFeO3 thin film under UV light illumination. BiFeO3 thin film prepared by pulsed laser deposition method onto the BaTiO3 thin film and the polarization behavior has been measured under poling voltage. Our results show the engineered polarization due to controllable schottky barrier under inverse poling voltage. This control on schottky barri...

the effect of chloride ions concentration on the electrochemical behavior of aisi 410 stainless steel in thesimulated concrete pore (0.1 m naoh + 0.1 m koh) solution was investigated by various electrochemicalmethods such as potentiodynamic polarization, mott–schottky analysis and electrochemical impedancespectroscopy (eis). potentiodynamic polarization curves revealed that increasing chloride ...

Not all Schottky groups of Möbius transformations are classical Schottky groups. In this paper we show that all Fuchsian Schottky groups are classical Schottky groups, but not necessarily on the same set of generators. AMS Classification 20H10; 30F35, 30F40

The goal of this paper is to describe a theoretical construction of an infinite collection of non-classical Schottky groups. We first show that there are infinitely many non-classical noded Schottky groups on the boundary of Schottky space, and we show that infinitely many of these are “sufficiently complicated”. We then show that every Schottky group in an appropriately defined relative conica...

Koebe’s Retrosection Theorem [8] states that every closed Riemann surface can be uniformized by a Schottky group. In [10] Marden showed that non-classical Schottky groups exist, and a first explicit example of a non-classical Schottky group was given by Yamamoto in [14]. Work on Schottky uniformizations of surfaces with certain symmetry has been done by people such as Hidalgo [7]. The natural q...