scanning impedance microscopy (sim) is one of the novel scanning probe microscopy (spm) techniques, which has been developed to taking image from sample surface, providing quantitative information with high lateral resolution on the interface capacitance, and investigating the local capacitance–voltage (c–v) behavior of the interface and ac transport properties. the sim is an ordinary afm equip...

Impedance spectroscopy has long been recognized as one of the major techniques for the characterization of ac transport in materials. The primary limitation of this technique is the lack of spatial resolution that precludes the equivalent circuit elements from being unambiguously associated with individual microstructural features. Here we present a scanning probe microscopy technique for quant...

Scanning Impedance Microscopy (SIM) is one of the novel scanning probe microscopy (SPM) techniques, which has been developed to taking image from sample surface, providing quantitative information with high lateral resolution on the interface capacitance, and investigating the local capacitance–voltage (C–V) behavior of the interface and AC transport properties. The SIM is an ordinary AFM equip...

Scanning Impedance Microscopy (SIM) is one of the novel scanning probe microscopy (SPM) techniques, which has been developed to taking image from sample surface, providing quantitative information with high lateral resolution on the interface capacitance, and investigating the local capacitance–voltage (C–V) behavior of the interface and AC transport properties. The SIM is an ordinary AFM equip...

scanning near-field optical microscopy (snom) is a member of scanning probe microscopes (spms) family which enables nanostructure investigation of the surfaces on a wide range of materials. in fact, snom combines the spm technology to the optical microscopy and in this way provide a powerful tool to study nano-structures with very high spatial resolution. in this paper, a qualified overview of ...