a comprehensive study of schottky barrier mosfet (sbmosfet) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within non-equilibrium green's function formalism. quantum confinement increases the effective schottky barrier height (sbh). (100) orientation provides lower effective schottky barrier height in comparison ...

A comprehensive study of Schottky barrier MOSFET (SBMOSFET) scaling issue is performed to determine the role of wafer orientation and structural parameters on the performance of this device within Non-equilibrium Green's Function formalism. Quantum confinement increases the effective Schottky barrier height (SBH). (100) orientation provides lower effective Schottky barrier height in compa...

We theoretically investigate resonant tunneling through S- and U-shaped nanostructured graphene nanoribbons. A rich structure of resonant tunneling peaks is found emanating from different quasi-bound states in the middle region. The tunneling current can be turned on and off by varying the Fermi energy. Tunability of resonant tunneling is realized by changing the width of the left and/or right ...

We present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters lea...

We investigate tunneling through a resonant level formed in a carbon nanotube quantum dot contacted by resistive metal wires. These contacts create a dissipative environment for the electrons tunneling across the nanotube, thus suppressing the tunneling rate. We study the shape of the resonant peak in the nanotube conductance, with the expectation that the peak width and height, both dependent ...

Heterostructure material that acts as resonant tunneling system is a major scientific challenge in applied physics. Herein, we report a resonant tunneling system, quasi-2D Cu(2)O/SnO(2) p-n heterostructure multi-layer film, prepared by electrochemical deposition in a quasi-2D ultra-thin liquid layer. By applying a special half-sine deposition potential across the electrodes, Cu(2)O and SnO(2) s...

Resonant tunneling of double-barrier quantum wells (DBQW's) affected by interface roughness has been investigated. Our results show that interface roughness induces oscillation resonant structure around the principal resonant peak. EA'ects of interface roughness on the resonant bias voltage, peak-to-valley current ratio, and the width of the principal resonant peak are also investigated. Temper...

We have developed a quantitative theory of resonant tunneling of magnetic flux between discrete macroscopically distinct quantum states in superconducting quantum interference device systems. The theory is based on the standard density-matrix approach. Its elements include the discussion of the two different relaxation mechanisms that exist for the double-well potential, and description of the ...