نتایج جستجو برای: Resistor Network Model

تعداد نتایج: 2596093  

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تربیت مدرس - دانشکده علوم انسانی 1389

rivers and runoff have always been of interest to human beings. in order to make use of the proper water resources, human societies, industrial and agricultural centers, etc. have usually been established near rivers. as the time goes on, these societies developed, and therefore water resources were extracted more and more. consequently, conditions of water quality of the rivers experienced rap...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه تربیت مدرس 1382

‏‎the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...

Abstract : The variation of the electrical resistivity of a material in the externalmagnetic field is known as magneto resistance. This phenomenon has been attractedboth theoretical and experimental researchers in miniaturization of magneto meters inthe recent years. In this paper, the magneto resistance of an inhomogeneous twodimensional conductor with ladder geometry i...

Journal: :JCM 2015
Rui-Ying Liu Zhong-Jian Kang Yanyan Feng

In modeling and location analysis, most traditional fault location methods do not consider about the existence of practical nonlinear model in distribution network, such as the nonlinearity of load and grounding resistor. Hence, the adopted model can’t express the practical network, and the location results will lose practical meaning. Aiming at solving the question above, this paper proposes a...

Journal: :Journal of the Japan Society of Powder and Powder Metallurgy 1995

Journal: :Physical review. B, Condensed matter 1989
Harris Aharony

The randomly diluted resistor network and XY model at low temperature T are studied near the d-dimensional percolation threshold using the ɛ expansion, where ɛ=6-d. The series expansion of the inverse susceptibility in powers of T for the XY model is identical to that of the appropriate resistive inverse susceptibility in powers of σ0−1, where σ0 is the conductance of a bond. However, the tempe...

Journal: :Physical review letters 1995
Lust Kakalios

Conductance fluctuations in hydrogenated amorphous silicon (a-Si:H) are simulated using a dynamical model of resistor diffusion on a lattice held at the percolation threshold. A fraction of lattice sites is designated as a trap, such that when a resistor diffuses onto that site it remains localized for a finite period of time. When a distribution of traps based on the defect density of a-Si:H i...

Journal: :Physical review. B, Condensed matter 1987
Harris Lubensky

The randomly diluted resistor network is formulated in terms of an n-replicated s-state Potts model with a spin-spin coupling constant J in the limit when first n, then s, and finally 1/J go to zero. This limit is discussed and to leading order in 1/J the generalized susceptibility is shown to reproduce the results of the accompanying paper where the resistor network is treated using the xy mod...

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