For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 Å plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the SiH4/NH3 gas mixing rate, working pressure, and RF power of PECVD at 250oC. Five PECVD process parameters are designed to lower the refractive index and ...

We have fabricated advanced metal–insulator–metal (MIM) capacitors with ultra-thin (200 Å) remote-PECVD Si3N4 dielectric layers having excellent electrical properties. The breakdown field strength of MIM capacitors with 200-Å-thick Si3N4 was larger than 3.5 MV/cm, which indicates the excellent quality of the deposited Si3N4 film. The main capacitance per unit area extracted by radio frequency (...

The crystallization of hydrogenated amorphous silicon layers (a-Si:H) [1,2] deposited by plasma enhanced chemical vapor deposition (PECVD) is of great interest. Generally, laser or metals are used to induce crystallization in aSi:H films. We have found that films deposited at high rf power (> 0.2 W/cm2) by PECVD technique shows some crystallites embedded in a-Si:H matrix and their after its vac...

Keywords: RF MEMS capacitive switch Dielectric charging Silicon nitride PECVD method a b s t r a c t The present paper aims to provide a better insight to the electrical characteristics of silicon nitride films that have been deposited with PECVD method under different conditions. The effect of film thickness, substrate temperature and the frequency that produces the plasma in PECVD method on t...

Abstract Bacterial infection of chronic wounds is a major healthcare problem that affects the quality life millions patients worldwide and leads to substantial cost burden. This project focused on manufacture potential wound healing agent. Plasma polymers from oregano secondary metabolites (PP‐OSMs) were fabricated by radiofrequency plasma‐enhanced chemical vapor deposition (RF‐PECVD) in contin...

Results on the characterization of the elecmcal properties of amorphous silicon-films for the three different growth methods, RF sputtering, PECVD, and LPCVD are reported. The performance of these a-Si films as heterojunctions on high resistivity p-type and n-type crystalline silicon is examined by measuring the noise, leakage current and the alpha particle response of 5 mm diameter detector st...

1. Introduction The surface trap of AlGaN/GaN high electron mobility transistors (HEMTs) can cause current collapse phenomenon which is the most serious limiting factor of the device's output power at high frequency operation. The surface passivation is a key step to reduce surface state effects and the quality of surface passivation film is very important [1]. Silicon nitride (SiNX) is widely ...