نتایج جستجو برای: Porous Silicon
تعداد نتایج: 127704 فیلتر نتایج به سال:
We have studied the effect of increasing porosity and its microstructure surface variation on the optical and dielectric properties of porous silicon. It seems that porosity, as the surface roughness within the range of a few microns, shows quantum effect in the absorption and reflection process of porous silicon. Optical constants of porous silicon at normal incidence of light with wavelengt...
Nanoporous silicon powder was produced via efficient magnesiothermic reduction. In this work, the thermal effect and reduction process time were investigated on the porous silicon structure. The nanoporous silicon powders were characterized by X-ray diffraction analysis and field emission scanning electron microscopy. The results demonstrate that porous structure was changed to homogeneous and...
porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. sem, ftir and pl have been used to characterize the morphological and optical properties of porous silicon. the influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. it is observed that pore size increases with etching tim...
Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. SEM, FTIR and PL have been used to characterize the morphological and optical properties of porous silicon. The influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with etching tim...
To study the influence of localized porous silicon regions on radiofrequency performances of passive devices, inductors were integrated on localized porous silicon regions, full porous silicon sheet, bulk silicon and glass substrates. In this work, a novel strong, resistant fluoropolymer mask is introduced to localize the porous silicon on the silicon wafer. Then, the quality factors and resona...
Porous silicon (PS) samples are obtained by electrochemical anodization of Si wafers in HF+DMF solution. The hydrogen complex components are formed on the inner surface walls of porous silicon. In this work the depth profile of porous silicon is estimated by measurement of hydrogen content in the depth of the sample. Since the well-known ion beam analysis simulation programs are inappropriate f...
Porous Silicon (PS) layers have been prepared from p-type silicon wafers of (100) orientation. SEM, XRD, FTIR and PL studies were done to characterize the surface morphological and optical properties of PS. The porosity of the PS samples was determined using the parameters obtained from SEM images by geometric method. The refractive index values of the PS samples as a function of poros...
In this paper we present our recent progresses towards effkient light emitting diodes based on porous silicon. We will touch the two following topics: 1) All porous silicon microcavities. Through the formation of a planar optical cavity it is possible to vary the spontaneous emission rate of porous silicon films. We demonstrate this by showing luminescence, and time resolved luminescence measur...
Porous Silicon (PS) layers have been prepared from p-type silicon wafers of (100) orientation. SEM, XRD, FTIR and PL studies were done to characterize the surface morphological and optical properties of PS. The porosity of the PS samples was determined using the parameters obtained from SEM images by geometric method. The refractive index values of the PS samples as a function of poros...
There have been many reports regarding visible luminescence and light emission at 1.54 mm, at room temperature, from porous silicon and from Er-doped porous silicon, respectively. Described is a different approach, based on Raman scattering in porous silicon, to generate radiation at 1.54 mm. Preliminary experimental results regarding Raman emission in porous silicon samples at 1.54 mm are also...
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