Plasma-assisted thermal chemical vapor deposition (CVD) was carried out to synthesize high-quality graphene film at a low temperature of 600°C. Monolayer graphene films were thus synthesized on Cu foil using various ratios of hydrogen and methane in a gaseous mixture. The in situ plasma emission spectrum was measured to elucidate the mechanism of graphene growth in a plasma-assisted thermal CVD...

A combination of two methods chemical vapor deposition (CVD) diamond films, microwave plasma–assisted (MW CVD) and hot filament (HF CVD), was used for the growth 100 µm-thick polycrystalline (PCD) layers on Si substrates. The bow HF CVD MW films showed opposite convex\concave trends; thus, combined material allowed reducing overall by a factor 2–3. Using initial 25 PCD layer achieving much high...

Both TaNx and WNxare candidates for copper liner applications. A thermal CVD process for the deposition of WNxliners, as well as both thermal CVD and plasma-assisted CVD processes for the deposition of TaNx, have been developed, all of which are carried out at wafer temperatures under 425°C. The basic material properties, conformality, thermal stability, and integration and diffusion barrier pr...

Small-angle X-ray scattering (SAXS) was performed on single-crystal chemical vapor deposition (CVD) diamonds with low nitrogen concentrations, which were fabricated by microwave plasma-assisted chemical vapor deposition at high growth rates. High optical quality undoped 500 µm-thick single-crystal CVD diamonds grown without intentional nitrogen addition proved to be excellent as windows on SAXS...